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10 A, 60 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MJD3055 by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1510 |
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RFQ | ||
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Bristol Electronics | 75 |
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RFQ | ||
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Quest Components | 10 A, 60 V, NPN, SI, POWER TRANSISTOR, TO-252 | 1208 |
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$0.3600 / $0.9000 | Buy Now |
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Win Source Electronics | Complementary Power Transistors | TRANS NPN 60V 10A DPAK | 23759 |
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$0.1806 / $0.2333 | Buy Now |
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MJD3055
onsemi
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Datasheet
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MJD3055
onsemi
10 A, 60 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DPAK (SINGLE GAUGE) TO-252 | |
Package Description | PLASTIC, CASE 369C-01, DPAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | 369C | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | onsemi | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 10 A | |
Collector-Emitter Voltage-Max | 60 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 5 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 140 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 235 | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 20 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 2 MHz |
This table gives cross-reference parts and alternative options found for MJD3055. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD3055, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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MJD3055G | onsemi | Check for Price | 10 A, 60 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE, Automotive Qualified | MJD3055 vs MJD3055G |
MJD30C-T1 | Samsung Semiconductor | Check for Price | Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 | MJD3055 vs MJD30C-T1 |
MJD30-1 | Samsung Semiconductor | Check for Price | Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 | MJD3055 vs MJD30-1 |
MJD30-T1 | Samsung Semiconductor | Check for Price | Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 | MJD3055 vs MJD30-T1 |
KSH30-TF | Samsung Semiconductor | Check for Price | Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin | MJD3055 vs KSH30-TF |
MJD30C-1 | Samsung Semiconductor | Check for Price | Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 | MJD3055 vs MJD30C-1 |
KSH3055-TF | Samsung Semiconductor | Check for Price | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | MJD3055 vs KSH3055-TF |
MJD3055-1 | onsemi | Check for Price | 10A, 60V, NPN, Si, POWER TRANSISTOR, CASE 369-07, 3 PIN | MJD3055 vs MJD3055-1 |
MJD3055-T1 | Samsung Semiconductor | Check for Price | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 | MJD3055 vs MJD3055-T1 |
The recommended PCB layout for optimal thermal performance involves placing a thermal pad on the bottom of the package, using a minimum of 2 oz copper thickness, and ensuring good thermal conduction to the surrounding copper areas. A thermal via array can also be used to improve heat dissipation.
To ensure reliable operation at high temperatures, it is essential to follow the recommended operating conditions, including junction temperature (Tj) and storage temperature (Tstg). Additionally, consider using a heat sink, thermal interface material, and ensuring good airflow around the device.
The MJD3055 has built-in ESD protection, but it is still recommended to follow standard ESD handling procedures when handling the device. This includes using an ESD wrist strap, ESD mat, and ESD-safe packaging materials.
Yes, the MJD3055 is suitable for high-reliability and automotive applications. However, it is essential to follow the recommended operating conditions, and consider additional testing and qualification according to the specific industry standards, such as AEC-Q101.
To troubleshoot common issues with the MJD3055, start by checking the device's operating conditions, including voltage, current, and temperature. Verify that the device is properly soldered and that the PCB layout is correct. Use oscilloscopes and other diagnostic tools to identify the root cause of the issue.