Datasheets
MJD3055 by:

10 A, 60 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE

Part Details for MJD3055 by onsemi

Results Overview of MJD3055 by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Medical Imaging Robotics and Drones

MJD3055 Information

MJD3055 by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MJD3055

Part # Distributor Description Stock Price Buy
Bristol Electronics   1510
RFQ
Bristol Electronics   75
RFQ
Quest Components 10 A, 60 V, NPN, SI, POWER TRANSISTOR, TO-252 1208
  • 1 $0.9000
  • 112 $0.4500
  • 445 $0.3600
$0.3600 / $0.9000 Buy Now
Win Source Electronics Complementary Power Transistors | TRANS NPN 60V 10A DPAK 23759
  • 250 $0.2333
  • 530 $0.2183
  • 825 $0.2108
  • 1,180 $0.1958
  • 1,535 $0.1883
  • 1,920 $0.1806
$0.1806 / $0.2333 Buy Now

Part Details for MJD3055

MJD3055 CAD Models

MJD3055 Part Data Attributes

MJD3055 onsemi
Buy Now Datasheet
Compare Parts:
MJD3055 onsemi 10 A, 60 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code DPAK (SINGLE GAUGE) TO-252
Package Description PLASTIC, CASE 369C-01, DPAK-3
Pin Count 3
Manufacturer Package Code 369C
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer onsemi
Case Connection COLLECTOR
Collector Current-Max (IC) 10 A
Collector-Emitter Voltage-Max 60 V
Configuration SINGLE
DC Current Gain-Min (hFE) 5
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 140 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 20 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 2 MHz

Alternate Parts for MJD3055

This table gives cross-reference parts and alternative options found for MJD3055. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD3055, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MJD3055G onsemi Check for Price 10 A, 60 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE, Automotive Qualified MJD3055 vs MJD3055G
MJD30C-T1 Samsung Semiconductor Check for Price Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 MJD3055 vs MJD30C-T1
MJD30-1 Samsung Semiconductor Check for Price Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 MJD3055 vs MJD30-1
MJD30-T1 Samsung Semiconductor Check for Price Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 MJD3055 vs MJD30-T1
KSH30-TF Samsung Semiconductor Check for Price Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin MJD3055 vs KSH30-TF
MJD30C-1 Samsung Semiconductor Check for Price Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 MJD3055 vs MJD30C-1
KSH3055-TF Samsung Semiconductor Check for Price Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin MJD3055 vs KSH3055-TF
MJD3055-1 onsemi Check for Price 10A, 60V, NPN, Si, POWER TRANSISTOR, CASE 369-07, 3 PIN MJD3055 vs MJD3055-1
MJD3055-T1 Samsung Semiconductor Check for Price Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 MJD3055 vs MJD3055-T1

MJD3055 Related Parts

MJD3055 Frequently Asked Questions (FAQ)

  • The recommended PCB layout for optimal thermal performance involves placing a thermal pad on the bottom of the package, using a minimum of 2 oz copper thickness, and ensuring good thermal conduction to the surrounding copper areas. A thermal via array can also be used to improve heat dissipation.

  • To ensure reliable operation at high temperatures, it is essential to follow the recommended operating conditions, including junction temperature (Tj) and storage temperature (Tstg). Additionally, consider using a heat sink, thermal interface material, and ensuring good airflow around the device.

  • The MJD3055 has built-in ESD protection, but it is still recommended to follow standard ESD handling procedures when handling the device. This includes using an ESD wrist strap, ESD mat, and ESD-safe packaging materials.

  • Yes, the MJD3055 is suitable for high-reliability and automotive applications. However, it is essential to follow the recommended operating conditions, and consider additional testing and qualification according to the specific industry standards, such as AEC-Q101.

  • To troubleshoot common issues with the MJD3055, start by checking the device's operating conditions, including voltage, current, and temperature. Verify that the device is properly soldered and that the PCB layout is correct. Use oscilloscopes and other diagnostic tools to identify the root cause of the issue.

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