Part Details for MJD127 by onsemi
Results Overview of MJD127 by onsemi
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
MJD127 Information
MJD127 by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for MJD127
MJD127 CAD Models
MJD127 Part Data Attributes
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MJD127
onsemi
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Datasheet
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MJD127
onsemi
8.0 A, 100 V PNP Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DPAK (SINGLE GAUGE) TO-252 | |
| Package Description | PLASTIC, CASE 369C-01, DPAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 369C | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Emitter Voltage-Max | 100 V | |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| DC Current Gain-Min (hFE) | 100 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | PNP | |
| Power Dissipation-Max (Abs) | 20 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 4 MHz |
Alternate Parts for MJD127
This table gives cross-reference parts and alternative options found for MJD127. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD127, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| MJD127TF | Fairchild Semiconductor Corporation | Check for Price | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 | MJD127 vs MJD127TF |
| MJD127T4 | Motorola Mobility LLC | Check for Price | 8A, 100V, PNP, Si, POWER TRANSISTOR | MJD127 vs MJD127T4 |
| MJD127T4 | onsemi | Check for Price | 8.0 A, 100 V PNP Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL | MJD127 vs MJD127T4 |
MJD127 Frequently Asked Questions (FAQ)
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The maximum SOA for the MJD127 is typically defined by the voltage and current ratings, but it's essential to consider the thermal limitations and ensure the device operates within the recommended temperature range to prevent thermal runaway.
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To ensure linear operation, the MJD127 should be biased in the active region, typically between 1-5V on the base with respect to the emitter, and the collector-emitter voltage should be around 10-20V. The exact biasing conditions may vary depending on the specific application and desired performance.
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A good PCB layout for the MJD127 should minimize thermal resistance by using a large copper area for heat dissipation, and ensure good electrical isolation between the transistor and other components. A heat sink or thermal pad may be necessary for high-power applications. Consult the onsemi application note for specific guidelines.
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Yes, the MJD127 can be used as a switch, but it's essential to consider the switching frequency, voltage, and current ratings. The transistor should be driven with a suitable base current to ensure fast switching times and minimize power losses. Additionally, consider the potential for electromagnetic interference (EMI) and take necessary precautions.
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To protect the MJD127 from ESD, handle the device with anti-static wrist straps, mats, or other ESD-protective equipment. Ensure the PCB design includes ESD protection components, such as TVS diodes or resistors, and follow proper assembly and handling procedures to minimize the risk of ESD damage.