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Part Details for MJD122TF by onsemi
Results Overview of MJD122TF by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Motor control systems
MJD122TF Information
MJD122TF by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MJD122TF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
MJD122TF
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Avnet Silica | Trans Darlington NPN 100V 8A 3Pin2Tab DPAK TR (Alt: MJD122TF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
MJD122TF
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EBV Elektronik | Trans Darlington NPN 100V 8A 3Pin2Tab DPAK TR (Alt: MJD122TF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for MJD122TF
MJD122TF CAD Models
MJD122TF Part Data Attributes
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MJD122TF
onsemi
Buy Now
Datasheet
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Compare Parts:
MJD122TF
onsemi
8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK-3, 2000-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DPAK-3 | |
| Package Description | DPAK-3 | |
| Manufacturer Package Code | 369AK | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Emitter Voltage-Max | 100 V | |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| DC Current Gain-Min (hFE) | 100 | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 20 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
Alternate Parts for MJD122TF
This table gives cross-reference parts and alternative options found for MJD122TF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD122TF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MJD122T4G | onsemi | $0.4558 | 8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL | MJD122TF vs MJD122T4G |
| MJD122 | Micro Commercial Components | Check for Price | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, PLASTIC, DPACK-3 | MJD122TF vs MJD122 |
| CJD122 | Central Semiconductor Corp | Check for Price | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 | MJD122TF vs CJD122 |
| CJD122TR13 | Central Semiconductor Corp | Check for Price | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, | MJD122TF vs CJD122TR13 |
| MJD122 | Jiangsu Changjiang Electronics Technology Co Ltd | Check for Price | Power Bipolar Transistor | MJD122TF vs MJD122 |
| MJD122TF | Rochester Electronics LLC | Check for Price | 8A, 100V, NPN, Si, POWER TRANSISTOR, TO-252, DPAK-3 | MJD122TF vs MJD122TF |
| MJD122T4 | onsemi | Check for Price | 8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL | MJD122TF vs MJD122T4 |
MJD122TF Frequently Asked Questions (FAQ)
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The MJD122TF can operate from -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C for optimal performance.
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The MJD122TF requires a bias voltage of 5V to 15V, and the recommended bias current is 1mA to 10mA. Ensure the bias voltage is stable and the bias current is within the recommended range for optimal performance.
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The maximum power dissipation for the MJD122TF is 1.5W. Ensure the device is properly heat-sinked and the ambient temperature is within the recommended range to prevent overheating.
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Yes, the MJD122TF can be used in switching applications, but ensure the switching frequency is within the recommended range (up to 100 kHz) and the device is properly biased and heat-sinked.
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Handle the MJD122TF with care, and ensure all equipment and personnel are properly grounded. Use ESD-protective packaging and follow proper ESD-handling procedures to prevent damage.