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8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MJD122T4G by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
10N9469
|
Newark | Darlington Transistor, Npn, 100V, D-Pak, Transistor Polarity:Npn, No. Of Pins:3Pins, Transistor Mounting:Surface Mount, Operating Temperature Max:150°C, Product Range:-, Qualification:-, Collector Emitter Voltage Max:100V Rohs Compliant: Yes |Onsemi MJD122T4G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 4691 |
|
$0.3830 / $0.4530 | Buy Now |
DISTI #
31Y2620
|
Newark | Bipolar (Bjt) Single Transistor, Darlington, Npn, 100 V, 4 Mhz, 20 W, 8 A, 1000 Rohs Compliant: Yes |Onsemi MJD122T4G RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.4880 / $0.4990 | Buy Now |
DISTI #
MJD122T4GOSCT-ND
|
DigiKey | TRANS NPN DARL 100V 8A DPAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
14589 In Stock |
|
$0.3110 / $1.3700 | Buy Now |
DISTI #
MJD122T4G
|
Avnet Americas | Darlington Transistor, Dual NPN, 100 V, 8 A, 20 W, 1000 hFE, TO-252 (DPAK), 3 Pins - Tape and Reel (Alt: MJD122T4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Container: Reel | 52500 |
|
$0.2923 | Buy Now |
DISTI #
MJD122T4G
|
Avnet Americas | Darlington Transistor, Dual NPN, 100 V, 8 A, 20 W, 1000 hFE, TO-252 (DPAK), 3 Pins - Tape and Reel (Alt: MJD122T4G) RoHS: Compliant Min Qty: 5000 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | |
DISTI #
MJD122T4G
|
Avnet Americas | Darlington Transistor, Dual NPN, 100 V, 8 A, 20 W, 1000 hFE, TO-252 (DPAK), 3 Pins - Tape and Reel (Alt: MJD122T4G) RoHS: Compliant Min Qty: 5000 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | |
DISTI #
10N9469
|
Avnet Americas | Darlington Transistor, Dual NPN, 100 V, 8 A, 20 W, 1000 hFE, TO-252 (DPAK), 3 Pins - Product that comes on tape, but is not reeled (Alt: 10N9469) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 36 Weeks, 1 Days Container: Ammo Pack | 0 |
|
$0.5490 / $0.8330 | Buy Now |
DISTI #
863-MJD122T4G
|
Mouser Electronics | Darlington Transistors 8A 100V Bipolar Power NPN RoHS: Compliant | 166 |
|
$0.3310 / $1.0800 | Buy Now |
DISTI #
V36:1790_07277710
|
Arrow Electronics | Trans Darlington NPN 100V 8A 1750mW 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks Date Code: 2446 | Americas - 25000 |
|
$0.3008 / $0.3468 | Buy Now |
DISTI #
E02:0323_00018654
|
Arrow Electronics | Trans Darlington NPN 100V 8A 1750mW 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks Date Code: 2452 | Europe - 20000 |
|
$0.3041 / $0.3506 | Buy Now |
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MJD122T4G
onsemi
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Datasheet
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Compare Parts:
MJD122T4G
onsemi
8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DPAK (SINGLE GAUGE) TO-252 | |
Package Description | LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | 369C | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | onsemi | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 8 A | |
Collector-Emitter Voltage-Max | 100 V | |
Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
DC Current Gain-Min (hFE) | 100 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 20 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 4 MHz |
This table gives cross-reference parts and alternative options found for MJD122T4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD122T4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
MJD122T4 | STMicroelectronics | $0.3883 | Low voltage NPN power Darlington transistor | MJD122T4G vs MJD122T4 |
The MJD122T4G can operate from -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C for optimal performance.
The MJD122T4G requires a bias voltage of 5V to 12V, and the recommended bias current is 1mA to 10mA. Ensure the bias voltage is stable and noise-free for optimal performance.
The maximum power dissipation for the MJD122T4G is 1.5W. Ensure proper heat sinking and thermal management to prevent overheating.
Yes, the MJD122T4G can be used in switching applications, but ensure the switching frequency is within the recommended range of 100kHz to 1MHz, and the device is properly biased and heat-sunk.
Handle the MJD122T4G with ESD-safe materials, and ensure the device is properly grounded during handling and assembly. Use ESD protection devices, such as TVS diodes, if necessary.