Part Details for MJD122T4 by Motorola Semiconductor Products
Results Overview of MJD122T4 by Motorola Semiconductor Products
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Motor control systems
MJD122T4 Information
MJD122T4 by Motorola Semiconductor Products is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MJD122T4
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1244 |
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RFQ | ||
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Quest Components | 8 A, 100 V, NPN, SI, POWER TRANSISTOR, TO-252 | 1369 |
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$0.1500 / $0.3600 | Buy Now |
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Quest Components | 8 A, 100 V, NPN, SI, POWER TRANSISTOR, TO-252 | 995 |
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$0.8750 / $2.5000 | Buy Now |
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Vyrian | Transistors | 211082 |
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RFQ |
Part Details for MJD122T4
MJD122T4 CAD Models
MJD122T4 Part Data Attributes
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MJD122T4
Motorola Semiconductor Products
Buy Now
Datasheet
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Compare Parts:
MJD122T4
Motorola Semiconductor Products
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Base Capacitance-Max | 200 pF | |
| Collector-Emitter Voltage-Max | 100 V | |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| DC Current Gain-Min (hFE) | 100 | |
| JESD-30 Code | R-PDSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 20 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 4 MHz | |
| Turn-off Time-Max (toff) | 3500 ns | |
| VCEsat-Max | 4 V |
Alternate Parts for MJD122T4
This table gives cross-reference parts and alternative options found for MJD122T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD122T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MJD122TF | Rochester Electronics LLC | Check for Price | 8A, 100V, NPN, Si, POWER TRANSISTOR, TO-252, DPAK-3 | MJD122T4 vs MJD122TF |
| KSH122TF | Fairchild Semiconductor Corporation | Check for Price | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin, DPAK-3/2 | MJD122T4 vs KSH122TF |
| KSH122TF_NL | Fairchild Semiconductor Corporation | Check for Price | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, LEAD FREE, DPAK-3 | MJD122T4 vs KSH122TF_NL |
| MJD122 | Motorola Mobility LLC | Check for Price | 8A, 100V, NPN, Si, POWER TRANSISTOR | MJD122T4 vs MJD122 |
| MJD122G | onsemi | $0.4858 | 8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE | MJD122T4 vs MJD122G |
MJD122T4 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the MJD122T4 is not explicitly stated in the datasheet. However, it's recommended to follow the guidelines provided in Motorola's application note AN1045, which provides SOA curves for similar devices. As a general rule, it's essential to ensure that the device operates within the specified voltage and current ratings to prevent damage.
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Thermal management is crucial for the MJD122T4. Ensure that the device is mounted on a suitable heat sink, and the thermal interface material (TIM) is applied correctly. The datasheet provides a thermal resistance junction-to-case (RθJC) value, which can be used to estimate the junction temperature. Monitor the device's temperature and adjust the heat sink design accordingly to prevent overheating.
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A good PCB layout and trace design are essential for the MJD122T4. Keep the traces short and wide to minimize inductance and resistance. Use a solid ground plane and ensure that the device's pins are connected to the correct nets. Avoid running high-current traces near sensitive analog signals. Follow Motorola's recommended PCB layout guidelines and consult with experienced designers if necessary.
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Yes, the MJD122T4 can be used in switching applications, but it's essential to ensure that the device is operated within its specified switching frequency and voltage ratings. The datasheet provides information on the device's switching characteristics, such as turn-on and turn-off times. However, it's crucial to consider the device's thermal limitations and ensure that the switching frequency does not exceed the recommended maximum.
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ESD protection is vital for the MJD122T4. Handle the device by the body or use an ESD wrist strap to prevent static buildup. Ensure that the PCB design includes ESD protection components, such as TVS diodes or resistors, to prevent voltage spikes from damaging the device. Follow proper ESD handling and storage procedures to prevent damage during manufacturing and assembly.