Part Details for MJD117T4 by onsemi
Results Overview of MJD117T4 by onsemi
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MJD117T4 Information
MJD117T4 by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MJD117T4
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
MJD117T4
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Avnet Americas | - Tape and Reel (Alt: MJD117T4) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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Bristol Electronics | 6473 |
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RFQ | ||
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Bristol Electronics | 6046 |
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RFQ | ||
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Quest Components | 2 A, 100 V, PNP, SI, POWER TRANSISTOR | 3603 |
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$0.2546 / $0.7275 | Buy Now |
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Chip 1 Exchange | INSTOCK | 1900 |
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RFQ |
Part Details for MJD117T4
MJD117T4 CAD Models
MJD117T4 Part Data Attributes
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MJD117T4
onsemi
Buy Now
Datasheet
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Compare Parts:
MJD117T4
onsemi
2.0 A, 100 V PNP Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DPAK (SINGLE GAUGE) TO-252 | |
Package Description | PLASTIC, CASE 369C-01, DPAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | 369C | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 111 Weeks | |
Samacsys Manufacturer | onsemi | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 2 A | |
Collector-Emitter Voltage-Max | 100 V | |
Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
DC Current Gain-Min (hFE) | 200 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 235 | |
Polarity/Channel Type | PNP | |
Power Dissipation-Max (Abs) | 50 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 25 MHz |
Alternate Parts for MJD117T4
This table gives cross-reference parts and alternative options found for MJD117T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD117T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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MJD117 | Motorola Semiconductor Products | Check for Price | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin | MJD117T4 vs MJD117 |
KSH117-TF | Samsung Semiconductor | Check for Price | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin | MJD117T4 vs KSH117-TF |
MJD117T4 Frequently Asked Questions (FAQ)
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The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the device, connecting it to a large copper area on the PCB, and using thermal vias to dissipate heat to the other side of the board. A minimum of 2oz copper thickness is recommended.
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To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves for voltage and current, and to ensure that the device is properly heatsinked. Additionally, the device should be operated within the specified junction temperature range (TJ) of -55°C to 150°C.
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The MJD117T4 has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. A human body model (HBM) of 2kV and a machine model (MM) of 200V are recommended.
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Yes, the MJD117T4 can be used in switching applications, but it's essential to ensure that the device is operated within the specified switching frequency range and that the switching losses are minimized. A minimum of 10uF decoupling capacitance is recommended.
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The power dissipation of the MJD117T4 can be calculated using the formula: Pd = (Vcc x Icc) + (Vds x Ids). Where Vcc is the supply voltage, Icc is the supply current, Vds is the drain-source voltage, and Ids is the drain-source current.