Datasheets
MJD117T4 by:

2.0 A, 100 V PNP Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL

Part Details for MJD117T4 by onsemi

Results Overview of MJD117T4 by onsemi

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Applications Industrial Automation Energy and Power Systems Transportation and Logistics Renewable Energy Automotive Motor control systems

MJD117T4 Information

MJD117T4 by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MJD117T4

Part # Distributor Description Stock Price Buy
DISTI # MJD117T4
Avnet Americas - Tape and Reel (Alt: MJD117T4) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 111 Weeks, 0 Days Container: Reel 0
RFQ
Bristol Electronics   6473
RFQ
Bristol Electronics   6046
RFQ
Quest Components 2 A, 100 V, PNP, SI, POWER TRANSISTOR 3603
  • 1 $0.7275
  • 551 $0.2910
  • 2,750 $0.2546
$0.2546 / $0.7275 Buy Now
Chip 1 Exchange INSTOCK 1900
RFQ

Part Details for MJD117T4

MJD117T4 CAD Models

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MJD117T4 Part Data Attributes

MJD117T4 onsemi
Buy Now Datasheet
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MJD117T4 onsemi 2.0 A, 100 V PNP Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code DPAK (SINGLE GAUGE) TO-252
Package Description PLASTIC, CASE 369C-01, DPAK-3
Pin Count 3
Manufacturer Package Code 369C
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 111 Weeks
Samacsys Manufacturer onsemi
Case Connection COLLECTOR
Collector Current-Max (IC) 2 A
Collector-Emitter Voltage-Max 100 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 200
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 50 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 25 MHz

Alternate Parts for MJD117T4

This table gives cross-reference parts and alternative options found for MJD117T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD117T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MJD117 Motorola Semiconductor Products Check for Price Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin MJD117T4 vs MJD117
KSH117-TF Samsung Semiconductor Check for Price Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin MJD117T4 vs KSH117-TF
Part Number Manufacturer Composite Price Description Compare
MJD117G onsemi $0.5542 2.0 A, 100 V PNP Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE MJD117T4 vs MJD117G
MJD117T4G onsemi $0.6739 2.0 A, 100 V PNP Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL MJD117T4 vs MJD117T4G
MJD117-T1 Samsung Semiconductor Check for Price Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 MJD117T4 vs MJD117-T1
MJD117 Motorola Mobility LLC Check for Price 2A, 100V, PNP, Si, POWER TRANSISTOR MJD117T4 vs MJD117
MJD117RLG onsemi Check for Price 2.0 A, 100 V PNP Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 1800-REEL MJD117T4 vs MJD117RLG
KSH117 Fairchild Semiconductor Corporation Check for Price Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 MJD117T4 vs KSH117
CJD117TR13 Central Semiconductor Corp Check for Price Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, MJD117T4 vs CJD117TR13
MJD117 STMicroelectronics Check for Price 2A, 100V, NPN, Si, POWER TRANSISTOR, TO-252, DPAK-3 MJD117T4 vs MJD117
CJD117 Central Semiconductor Corp Check for Price Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 MJD117T4 vs CJD117

MJD117T4 Related Parts

MJD117T4 Frequently Asked Questions (FAQ)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the device, connecting it to a large copper area on the PCB, and using thermal vias to dissipate heat to the other side of the board. A minimum of 2oz copper thickness is recommended.

  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves for voltage and current, and to ensure that the device is properly heatsinked. Additionally, the device should be operated within the specified junction temperature range (TJ) of -55°C to 150°C.

  • The MJD117T4 has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. A human body model (HBM) of 2kV and a machine model (MM) of 200V are recommended.

  • Yes, the MJD117T4 can be used in switching applications, but it's essential to ensure that the device is operated within the specified switching frequency range and that the switching losses are minimized. A minimum of 10uF decoupling capacitance is recommended.

  • The power dissipation of the MJD117T4 can be calculated using the formula: Pd = (Vcc x Icc) + (Vds x Ids). Where Vcc is the supply voltage, Icc is the supply current, Vds is the drain-source voltage, and Ids is the drain-source current.

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