Part Details for MJD117 by onsemi
Results Overview of MJD117 by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MJD117 Information
MJD117 by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MJD117
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1577 |
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RFQ | ||
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Quest Components | TRANSISTOR,BJT,DARLINGTON,PNP,100V V(BR)CEO,2A I(C),TO-252 | 927 |
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$0.2000 / $0.4800 | Buy Now |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 20 |
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$1.0000 / $1.5400 | Buy Now |
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Win Source Electronics | Complementary Darlington Power Transistors | TRANS PNP DARL 100V 2A DPAK | 10083 |
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$0.1050 / $0.1355 | Buy Now |
Part Details for MJD117
MJD117 CAD Models
MJD117 Part Data Attributes
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MJD117
onsemi
Buy Now
Datasheet
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Compare Parts:
MJD117
onsemi
2.0 A, 100 V PNP Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DPAK (SINGLE GAUGE) TO-252 | |
Package Description | DPAK-3/2 | |
Pin Count | 3 | |
Manufacturer Package Code | 369C | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | onsemi | |
Collector Current-Max (IC) | 2 A | |
Collector-Base Capacitance-Max | 200 pF | |
Collector-Emitter Voltage-Max | 100 V | |
Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
DC Current Gain-Min (hFE) | 200 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 235 | |
Polarity/Channel Type | PNP | |
Power Dissipation Ambient-Max | 1.75 W | |
Power Dissipation-Max (Abs) | 20 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 25 MHz | |
VCEsat-Max | 3 V |
Alternate Parts for MJD117
This table gives cross-reference parts and alternative options found for MJD117. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD117, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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MJD117 | Motorola Semiconductor Products | Check for Price | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin | MJD117 vs MJD117 |
KSH117-TF | Samsung Semiconductor | Check for Price | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin | MJD117 vs KSH117-TF |
MJD117 Frequently Asked Questions (FAQ)
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The MJD117 can handle surge currents up to 100A for 10ms, but it's recommended to derate the current based on the operating temperature and duration of the surge.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 4V to 15V, and the gate current (Ig) should be limited to 10mA. Additionally, the drain-source voltage (Vds) should be within the recommended operating range.
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A good PCB layout for MJD117 should have a large copper area for heat dissipation, and the device should be placed near a heat sink or thermal pad. The PCB should also have a low inductance path for the drain and source pins to minimize voltage ringing.
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Yes, MJD117 can be used in high-frequency switching applications up to 100kHz, but the device's switching losses and parasitic capacitances should be considered in the design. A proper gate drive circuit and snubber network may be required to minimize ringing and ensure reliable operation.
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To protect the MJD117 from overvoltage and overcurrent conditions, a voltage clamp or transient voltage suppressor (TVS) can be used to limit the voltage across the device. Additionally, a current sense resistor and a fuse or circuit breaker can be used to detect and respond to overcurrent conditions.