Datasheets
MJD117 by:

2.0 A, 100 V PNP Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE

Part Details for MJD117 by onsemi

Results Overview of MJD117 by onsemi

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Applications Industrial Automation Energy and Power Systems Transportation and Logistics Renewable Energy Automotive Motor control systems

MJD117 Information

MJD117 by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MJD117

Part # Distributor Description Stock Price Buy
Bristol Electronics   1577
RFQ
Quest Components TRANSISTOR,BJT,DARLINGTON,PNP,100V V(BR)CEO,2A I(C),TO-252 927
  • 1 $0.4800
  • 189 $0.2240
  • 894 $0.2000
$0.2000 / $0.4800 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 20
  • 1 $1.5400
  • 100 $1.1500
  • 1,000 $1.0000
$1.0000 / $1.5400 Buy Now
Win Source Electronics Complementary Darlington Power Transistors | TRANS PNP DARL 100V 2A DPAK 10083
  • 430 $0.1355
  • 915 $0.1268
  • 1,420 $0.1224
  • 2,035 $0.1137
  • 2,645 $0.1093
  • 3,305 $0.1050
$0.1050 / $0.1355 Buy Now

Part Details for MJD117

MJD117 CAD Models

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MJD117 Part Data Attributes

MJD117 onsemi
Buy Now Datasheet
Compare Parts:
MJD117 onsemi 2.0 A, 100 V PNP Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code DPAK (SINGLE GAUGE) TO-252
Package Description DPAK-3/2
Pin Count 3
Manufacturer Package Code 369C
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer onsemi
Collector Current-Max (IC) 2 A
Collector-Base Capacitance-Max 200 pF
Collector-Emitter Voltage-Max 100 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 200
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type PNP
Power Dissipation Ambient-Max 1.75 W
Power Dissipation-Max (Abs) 20 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 25 MHz
VCEsat-Max 3 V

Alternate Parts for MJD117

This table gives cross-reference parts and alternative options found for MJD117. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD117, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MJD117 Motorola Semiconductor Products Check for Price Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin MJD117 vs MJD117
KSH117-TF Samsung Semiconductor Check for Price Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin MJD117 vs KSH117-TF
Part Number Manufacturer Composite Price Description Compare
MJD117G onsemi $0.5542 2.0 A, 100 V PNP Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE MJD117 vs MJD117G
MJD117T4G onsemi $0.6739 2.0 A, 100 V PNP Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL MJD117 vs MJD117T4G
MJD117-T1 Samsung Semiconductor Check for Price Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 MJD117 vs MJD117-T1
MJD117 Motorola Mobility LLC Check for Price 2A, 100V, PNP, Si, POWER TRANSISTOR MJD117 vs MJD117
MJD117RLG onsemi Check for Price 2.0 A, 100 V PNP Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 1800-REEL MJD117 vs MJD117RLG
KSH117 Fairchild Semiconductor Corporation Check for Price Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 MJD117 vs KSH117
CJD117TR13 Central Semiconductor Corp Check for Price Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, MJD117 vs CJD117TR13
MJD117 STMicroelectronics Check for Price 2A, 100V, NPN, Si, POWER TRANSISTOR, TO-252, DPAK-3 MJD117 vs MJD117
CJD117 Central Semiconductor Corp Check for Price Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 MJD117 vs CJD117

MJD117 Related Parts

MJD117 Frequently Asked Questions (FAQ)

  • The MJD117 can handle surge currents up to 100A for 10ms, but it's recommended to derate the current based on the operating temperature and duration of the surge.

  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 4V to 15V, and the gate current (Ig) should be limited to 10mA. Additionally, the drain-source voltage (Vds) should be within the recommended operating range.

  • A good PCB layout for MJD117 should have a large copper area for heat dissipation, and the device should be placed near a heat sink or thermal pad. The PCB should also have a low inductance path for the drain and source pins to minimize voltage ringing.

  • Yes, MJD117 can be used in high-frequency switching applications up to 100kHz, but the device's switching losses and parasitic capacitances should be considered in the design. A proper gate drive circuit and snubber network may be required to minimize ringing and ensure reliable operation.

  • To protect the MJD117 from overvoltage and overcurrent conditions, a voltage clamp or transient voltage suppressor (TVS) can be used to limit the voltage across the device. Additionally, a current sense resistor and a fuse or circuit breaker can be used to detect and respond to overcurrent conditions.

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