Part Details for MJB45H11T4G by onsemi
Results Overview of MJB45H11T4G by onsemi
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
MJB45H11T4G Information
MJB45H11T4G by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MJB45H11T4G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
12AM0984
|
Newark | Power Transistor, Pnp, -80V, D2-Pak, Transistor Polarity:Pnp, Collector Emitter Voltage V(Br)Ceo:-80V, Transition Frequency Ft:40Mhz, Power Dissipation Pd:50W, Dc Collector Current:-10A, Dc Current Gain Hfe:40Hfe, Transistor Case Rohs Compliant: Yes |Onsemi MJB45H11T4G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 8 |
|
$1.1000 / $1.9800 | Buy Now |
|
DISTI #
26K4438
|
Newark | Power Transistor, Pnp, -80V, D2-Pak, Transistor Polarity:Pnp, Collector Emitter Voltage Max:80V, Continuous Collector Current:10A, Power Dissipation:50W, Transistor Mounting:Surface Mount, No. Of Pins:3Pins, Product Range:- Rohs Compliant: Yes |Onsemi MJB45H11T4G RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.5380 / $0.7150 | Buy Now |
|
DISTI #
79AH4380
|
Newark | Bip D2Pak Pnp 8A 80V Tr F Rohs Compliant: Yes |Onsemi MJB45H11T4G RoHS: Compliant Min Qty: 1600 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.5040 | Buy Now |
|
DISTI #
MJB45H11T4GOSCT-ND
|
DigiKey | TRANS PNP 80V 10A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1643 In Stock |
|
$0.4909 / $1.9000 | Buy Now |
|
DISTI #
MJB45H11T4G
|
Avnet Americas | Trans GP BJT PNP 80V 10A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: MJB45H11T4G) RoHS: Compliant Min Qty: 1600 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 12800 |
|
$0.4416 / $0.5035 | Buy Now |
|
DISTI #
863-MJB45H11T4G
|
Mouser Electronics | Bipolar Transistors - BJT 8A 80V 50W PNP RoHS: Compliant | 1504 |
|
$0.4920 / $1.7900 | Buy Now |
|
|
Onlinecomponents.com | Bipolar Transistor, PNP, 80 V, 10 A RoHS: Compliant | 0 |
|
$0.4679 / $0.5310 | Buy Now |
|
|
Bristol Electronics | 319 |
|
RFQ | ||
|
|
Quest Components | 10 A, 80 V, PNP, SI, POWER TRANSISTOR | 2756 |
|
$0.3520 / $0.9600 | Buy Now |
|
|
Quest Components | 10 A, 80 V, PNP, SI, POWER TRANSISTOR | 255 |
|
$0.6400 / $1.6000 | Buy Now |
Part Details for MJB45H11T4G
MJB45H11T4G CAD Models
MJB45H11T4G Part Data Attributes
|
|
MJB45H11T4G
onsemi
Buy Now
Datasheet
|
Compare Parts:
MJB45H11T4G
onsemi
Bipolar Transistor, PNP, 80 V, 10 A, D2PAK 2 LEAD, 800-REEL
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | D2PAK 2 LEAD | |
| Pin Count | 3 | |
| Manufacturer Package Code | 418B-04 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 10 A | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 40 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | PNP | |
| Power Dissipation-Max (Abs) | 50 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 40 MHz |
MJB45H11T4G Frequently Asked Questions (FAQ)
-
The recommended PCB footprint for the MJB45H11T4G is a thermal pad with a minimum size of 2.5mm x 2.5mm, with a 1.5mm diameter thermal via connecting to a larger copper area on the bottom layer for heat dissipation.
-
To ensure reliable operation in high-temperature environments, it is recommended to derate the maximum junction temperature (Tj) by 5°C for every 1000m increase in altitude, and to ensure good thermal design and heat sinking to keep the junction temperature below 150°C.
-
The maximum safe operating area (SOA) for the MJB45H11T4G is defined by the boundaries of the maximum voltage, current, and power dissipation ratings. It is recommended to operate the device within the SOA to prevent damage or degradation.
-
To protect the MJB45H11T4G from electrostatic discharge (ESD), it is recommended to handle the device in an ESD-controlled environment, use ESD-protective packaging and handling materials, and to ensure that all personnel handling the device are grounded.
-
The recommended storage and handling procedure for the MJB45H11T4G is to store the device in its original packaging, in a dry and clean environment, away from direct sunlight and moisture, and to handle the device by the body or leads to prevent damage or contamination.