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Part Details for MJ11012G by onsemi
Results Overview of MJ11012G by onsemi
- Distributor Offerings: (19 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MJ11012G Information
MJ11012G by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MJ11012G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
42K1309
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Newark | Bipolar Transistor, Npn, 60V To-204, Transistor Polarity:Npn, Collector Emitter Voltage V(Br)Ceo:60V, Power Dissipation Pd:200W, Dc Collector Current:30A, Rf Transistor Case:To-204Aa, No. Of Pins:2Pins, Dc Current Gain Hfe:1000Hfe Rohs Compliant: Yes |Onsemi MJ11012G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 93 |
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$4.1400 | Buy Now |
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DISTI #
MJ11012GOS-ND
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DigiKey | TRANS NPN DARL 60V 30A TO204 Min Qty: 1 Lead time: 8 Weeks Container: Tray |
40 In Stock |
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$4.3939 / $9.6600 | Buy Now |
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DISTI #
MJ11012G
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Avnet Americas | Trans Darlington NPN 60V 30A 3-Pin(2+Tab) TO-204 Tray - Trays (Alt: MJ11012G) RoHS: Compliant Min Qty: 164 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tray | 200 Partner Stock |
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$3.7654 / $4.1216 | Buy Now |
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DISTI #
42K1309
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Avnet Americas | Trans Darlington NPN 60V 30A 3-Pin(2+Tab) TO-204 Tray - Bulk (Alt: 42K1309) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks, 1 Days Container: Bulk | 93 Partner Stock |
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$6.2700 / $8.7800 | Buy Now |
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DISTI #
MJ11012G
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Avnet Americas | Trans Darlington NPN 60V 30A 3-Pin(2+Tab) TO-204 Tray - Trays (Alt: MJ11012G) RoHS: Compliant Min Qty: 200 Package Multiple: 100 Lead time: 8 Weeks, 0 Days Container: Tray | 200 Factory Stock |
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$4.3396 / $4.7501 | Buy Now |
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DISTI #
863-MJ11012G
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Mouser Electronics | Darlington Transistors 30A 60V Bipolar Power NPN RoHS: Compliant | 189 |
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$4.3900 / $7.7500 | Buy Now |
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Onlinecomponents.com | 30 A, 60 V NPN Darlington Bipolar Power Transistor RoHS: Compliant |
195 In Stock |
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$4.2600 / $8.0100 | Buy Now |
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DISTI #
87651215
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Verical | Trans Darlington NPN 60V 30A 200000mW 3-Pin(2+Tab) TO-3 Tray Min Qty: 100 Package Multiple: 100 | Americas - 1200 |
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$4.4215 | Buy Now |
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DISTI #
86008160
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Verical | Trans Darlington NPN 60V 30A 200000mW 3-Pin(2+Tab) TO-3 Tray Min Qty: 65 Package Multiple: 1 Date Code: 1001 | Americas - 300 |
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$4.6250 / $5.7750 | Buy Now |
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DISTI #
85998692
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Verical | Trans Darlington NPN 60V 30A 200000mW 3-Pin(2+Tab) TO-3 Tray Min Qty: 65 Package Multiple: 1 Date Code: 1801 | Americas - 270 |
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$4.6250 / $5.7750 | Buy Now |
Part Details for MJ11012G
MJ11012G CAD Models
MJ11012G Part Data Attributes
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MJ11012G
onsemi
Buy Now
Datasheet
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Compare Parts:
MJ11012G
onsemi
30 A, 60 V NPN Darlington Bipolar Power Transistor, TO-204 (TO-3), 100-FTRAY
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-204 (TO-3) | |
| Package Description | CASE 1-07, TO-3, 2 PIN | |
| Pin Count | 2 | |
| Manufacturer Package Code | 1-07 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 2 Days | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 30 A | |
| Collector-Emitter Voltage-Max | 60 V | |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| DC Current Gain-Min (hFE) | 200 | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 200 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 4 MHz |
Alternate Parts for MJ11012G
This table gives cross-reference parts and alternative options found for MJ11012G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJ11012G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MJ11012 | STMicroelectronics | Check for Price | 30A, 60V, NPN, Si, POWER TRANSISTOR, TO-3 | MJ11012G vs MJ11012 |
| MJ11014 | Motorola Mobility LLC | Check for Price | 30A, 90V, NPN, Si, POWER TRANSISTOR, TO-204AA | MJ11012G vs MJ11014 |
| BDX69A.MODR1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 25A, 80V, NPN, Si, POWER TRANSISTOR, TO-3 | MJ11012G vs BDX69A.MODR1 |
| MJ11012 | Central Semiconductor Corp | Check for Price | Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN | MJ11012G vs MJ11012 |
| MJ4033LEADFREE | Central Semiconductor Corp | Check for Price | Power Bipolar Transistor, 16A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN | MJ11012G vs MJ4033LEADFREE |
| BUX20.MODR1 | TT Electronics Resistors | Check for Price | Power Bipolar Transistor, 50A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, METAL, TO-3, 2 PIN | MJ11012G vs BUX20.MODR1 |
| BUX20.MOD | TT Electronics Resistors | Check for Price | Power Bipolar Transistor, 50A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, TO-3, 2 PIN | MJ11012G vs BUX20.MOD |
| MJ11014 | onsemi | Check for Price | 30A, 90V, NPN, Si, POWER TRANSISTOR, TO-204AA, METAL, TO-3, 2 PIN | MJ11012G vs MJ11014 |
| BDX69A.MOD | TT Electronics Resistors | Check for Price | Power Bipolar Transistor, 25A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | MJ11012G vs BDX69A.MOD |
| BUX20R1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 50A, 125V, NPN, Si, POWER TRANSISTOR, TO-204AE, TO-3, 2 PIN | MJ11012G vs BUX20R1 |
MJ11012G Frequently Asked Questions (FAQ)
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The recommended operating voltage range for the MJ11012G is 10V to 30V, with a typical voltage of 12V.
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To ensure proper biasing, connect the base of the transistor to a voltage source through a resistor, and connect the emitter to ground through a resistor. The collector should be connected to the load.
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The maximum current rating for the MJ11012G is 10A, with a peak current rating of 15A.
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To protect the MJ11012G from overheating, ensure proper heat sinking, use a heat sink with a thermal resistance of 1°C/W or less, and keep the junction temperature below 150°C.
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Yes, the MJ11012G can be used in switching applications, but it's essential to ensure the transistor is properly biased and the switching frequency is within the recommended range.