Part Details for MGSF3454XT1 by onsemi
Results Overview of MGSF3454XT1 by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
MGSF3454XT1 Information
MGSF3454XT1 by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MGSF3454XT1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-MGSF3454XT1-ND
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DigiKey | SMALL SIGNAL N-CHANNEL MOSFET Min Qty: 841 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
25000 In Stock |
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$0.3600 | Buy Now |
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DISTI #
86118968
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Verical | Trans MOSFET N-CH 30V 1.75A 6-Pin TSOP T/R Min Qty: 971 Package Multiple: 1 Date Code: 9901 | Americas - 25000 |
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$0.2661 / $0.3864 | Buy Now |
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Rochester Electronics | Small Signal Field-Effect Transistor, 1.75A, 30V, N-Channel MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 25000 |
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$0.2129 / $0.3434 | Buy Now |
Part Details for MGSF3454XT1
MGSF3454XT1 CAD Models
MGSF3454XT1 Part Data Attributes
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MGSF3454XT1
onsemi
Buy Now
Datasheet
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Compare Parts:
MGSF3454XT1
onsemi
TRANSISTOR 1750 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, TSOP-6, FET General Purpose Small Signal
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TSOP | |
| Package Description | TSOP-6 | |
| Pin Count | 6 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 1.75 A | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.95 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MGSF3454XT1
This table gives cross-reference parts and alternative options found for MGSF3454XT1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MGSF3454XT1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MGSF3454XT1 | Motorola Mobility LLC | Check for Price | 1750mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | MGSF3454XT1 vs MGSF3454XT1 |
MGSF3454XT1 Frequently Asked Questions (FAQ)
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A good PCB layout should ensure minimal thermal resistance, use a solid ground plane, and keep high-frequency signals away from the device. A thermal pad on the bottom of the package should be connected to a heat sink or a thermal via to dissipate heat efficiently.
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The gate drive circuit should be designed to provide a fast rise and fall time, low impedance, and sufficient current to charge and discharge the gate capacitance. A gate driver IC with a high current capability and a low output impedance is recommended.
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The SOA limits are not explicitly stated in the datasheet, but they can be estimated based on the device's thermal and electrical characteristics. It's recommended to consult with onsemi's application engineers or perform simulations to determine the SOA limits for specific operating conditions.
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The internal diode's reverse recovery characteristics can be managed by using a snubber circuit or a diode with a fast reverse recovery time in parallel with the device. This helps to reduce voltage spikes and ringing during switching transitions.
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To minimize EMI and RFI, use a shielded layout, keep high-frequency signals away from the device, and use a common-mode choke or ferrite beads to filter out noise. Additionally, ensure that the device is properly decoupled and bypassed.