Datasheets
MGSF2N02ELT1 by:

Single N-Channel Logic Level Power MOSFET 20V 2.8A 85 mΩ, SOT-23 (TO-236) 3 LEAD, 3000-REEL

Part Details for MGSF2N02ELT1 by onsemi

Results Overview of MGSF2N02ELT1 by onsemi

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MGSF2N02ELT1 Information

MGSF2N02ELT1 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MGSF2N02ELT1

Part # Distributor Description Stock Price Buy
DISTI # MGSF2N02ELT1
Avnet Americas - Tape and Reel (Alt: MGSF2N02ELT1) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 111 Weeks, 0 Days Container: Reel 0
RFQ
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,2.8A I(D),SOT-23 2464
  • 1 $0.3000
  • 251 $0.1600
  • 1,251 $0.1300
$0.1300 / $0.3000 Buy Now

Part Details for MGSF2N02ELT1

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MGSF2N02ELT1 Part Data Attributes

MGSF2N02ELT1 onsemi
Buy Now Datasheet
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MGSF2N02ELT1 onsemi Single N-Channel Logic Level Power MOSFET 20V 2.8A 85 mΩ, SOT-23 (TO-236) 3 LEAD, 3000-REEL
Pbfree Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ON SEMICONDUCTOR
Part Package Code SOT-23 (TO-236) 3 LEAD
Package Description CASE 318-08, 3 PIN
Pin Count 3
Manufacturer Package Code 318
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 111 Weeks
Samacsys Manufacturer onsemi
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 2.8 A
Drain-source On Resistance-Max 0.085 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.25 W
Pulsed Drain Current-Max (IDM) 5 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn80Pb20)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MGSF2N02ELT1

This table gives cross-reference parts and alternative options found for MGSF2N02ELT1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MGSF2N02ELT1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MGSF2N02ELT1G onsemi $0.1718 Single N-Channel Logic Level Power MOSFET 20V 2.8A 85 mΩ, SOT-23 (TO-236) 3 LEAD, 3000-REEL MGSF2N02ELT1 vs MGSF2N02ELT1G

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