Part Details for M29W800DB70N6E by Numonyx Memory Solutions
Results Overview of M29W800DB70N6E by Numonyx Memory Solutions
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
M29W800DB70N6E Information
M29W800DB70N6E by Numonyx Memory Solutions is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for M29W800DB70N6E
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
37M5015
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Newark | Flash, 8Mbit, 70Ns, Tsop-48, Flash Memory Type:Parallel Nor, Memory Configuration:1M X 8Bit, Interfaces:Parallel, Ic Case/Package:Tsop, No. Of Pins:48Pins, Clock Frequency Max:-, Access Time:70Ns, Supply Voltage Min:2.7V, Msl:- Rohs Compliant: Yes |Numonyx M29W800DB70N6E RoHS: Compliant Min Qty: 96 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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Vyrian | Memory ICs | 1562 |
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RFQ |
Part Details for M29W800DB70N6E
M29W800DB70N6E CAD Models
M29W800DB70N6E Part Data Attributes
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M29W800DB70N6E
Numonyx Memory Solutions
Buy Now
Datasheet
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Compare Parts:
M29W800DB70N6E
Numonyx Memory Solutions
Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NUMONYX | |
| Part Package Code | TSOP | |
| Package Description | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | |
| Pin Count | 48 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| Access Time-Max | 70 ns | |
| Additional Feature | BOTTOM BOOT BLOCK | |
| Alternate Memory Width | 8 | |
| Boot Block | BOTTOM | |
| Command User Interface | YES | |
| Common Flash Interface | YES | |
| Data Polling | YES | |
| JESD-30 Code | R-PDSO-G48 | |
| JESD-609 Code | e3/e6 | |
| Length | 18.4 mm | |
| Memory Density | 8388608 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Sectors/Size | 1,2,1,15 | |
| Number of Terminals | 48 | |
| Number of Words | 524288 words | |
| Number of Words Code | 512000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 512KX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP1 | |
| Package Equivalence Code | TSSOP48,.8,20 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Parallel/Serial | PARALLEL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Programming Voltage | 3 V | |
| Qualification Status | Not Qualified | |
| Ready/Busy | YES | |
| Seated Height-Max | 1.2 mm | |
| Sector Size | 16K,8K,32K,64K | |
| Standby Current-Max | 0.0001 A | |
| Supply Current-Max | 0.02 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.5 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Toggle Bit | YES | |
| Type | NOR TYPE | |
| Width | 12 mm |
Alternate Parts for M29W800DB70N6E
This table gives cross-reference parts and alternative options found for M29W800DB70N6E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M29W800DB70N6E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| AM29DL800BB70FC | AMD | Check for Price | Flash, 512KX16, 70ns, PDSO48, REVERSE, MO-142DD, TSOP-48 | M29W800DB70N6E vs AM29DL800BB70FC |
| M29W800FB7AN6ST | Micron Technology Inc | Check for Price | Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | M29W800DB70N6E vs M29W800FB7AN6ST |
| M29W800DB70N6 | Micron Technology Inc | Check for Price | Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | M29W800DB70N6E vs M29W800DB70N6 |
| M29W800DXB70N1E | STMicroelectronics | Check for Price | 512KX16 FLASH 3V PROM, 70ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 | M29W800DB70N6E vs M29W800DXB70N1E |
| M29W800DT70N6T | Numonyx Memory Solutions | Check for Price | Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | M29W800DB70N6E vs M29W800DT70N6T |
| MX26LV800ABTC-70G | Macronix International Co Ltd | Check for Price | Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, MO-142, TSOP1-48 | M29W800DB70N6E vs MX26LV800ABTC-70G |
| AM29LV800DB-70ED | AMD | Check for Price | Flash, 512KX16, 70ns, PDSO48, LEAD FREE, MO-142DD, TSOP-48 | M29W800DB70N6E vs AM29LV800DB-70ED |
| M29W800FB70N3F | STMicroelectronics | Check for Price | 512KX16 FLASH 3V PROM, 70ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | M29W800DB70N6E vs M29W800FB70N3F |
| M29W800DXB70N1T | STMicroelectronics | Check for Price | 512KX16 FLASH 3V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | M29W800DB70N6E vs M29W800DXB70N1T |
| M29W800FB7AN3ST | Micron Technology Inc | Check for Price | Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | M29W800DB70N6E vs M29W800FB7AN3ST |
M29W800DB70N6E Frequently Asked Questions (FAQ)
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The M29W800DB70N6E supports up to 100,000 erase cycles per sector, and up to 10,000 erase cycles per block.
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The HOLD# signal should be asserted low to pause the current operation, and de-asserted high to resume the operation. During hold, the device will tri-state its outputs and ignore any input signals.
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The recommended method is to poll the RY/BY# signal, which will go low when the operation is complete. Alternatively, you can also use the ESI (Erase/Status Interface) to monitor the status of the operation.
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The WP# signal should be asserted low to enable write protection, and de-asserted high to disable write protection. When WP# is low, the device will ignore any write or erase commands.
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The M29W800DB70N6E operates over a temperature range of -40°C to +85°C, with a maximum junction temperature of 125°C.