Part Details for M29W800DB70N1 by STMicroelectronics
Results Overview of M29W800DB70N1 by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
M29W800DB70N1 Information
M29W800DB70N1 by STMicroelectronics is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for M29W800DB70N1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 879 |
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ComSIT USA | 8 MBIT (1MBIT X8 OR 512KBIT X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY Flash, 512KX16, 70ns, PDSO48 ECCN: EAR99 RoHS: Not Compliant |
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RFQ |
Part Details for M29W800DB70N1
M29W800DB70N1 CAD Models
M29W800DB70N1 Part Data Attributes
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M29W800DB70N1
STMicroelectronics
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Datasheet
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M29W800DB70N1
STMicroelectronics
512KX16 FLASH 3V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TSOP | |
| Package Description | 12 X 20 MM, PLASTIC, TSOP-48 | |
| Pin Count | 48 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| Access Time-Max | 70 ns | |
| Additional Feature | BOTTOM BOOT BLOCK | |
| Alternate Memory Width | 8 | |
| Boot Block | BOTTOM | |
| Command User Interface | YES | |
| Common Flash Interface | YES | |
| Data Polling | YES | |
| JESD-30 Code | R-PDSO-G48 | |
| JESD-609 Code | e0 | |
| Length | 18.4 mm | |
| Memory Density | 8388608 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Sectors/Size | 1,2,1,15 | |
| Number of Terminals | 48 | |
| Number of Words | 524288 words | |
| Number of Words Code | 512000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 512KX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSSOP | |
| Package Equivalence Code | TSSOP48,.8,20 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
| Parallel/Serial | PARALLEL | |
| Programming Voltage | 3 V | |
| Qualification Status | Not Qualified | |
| Ready/Busy | YES | |
| Seated Height-Max | 1.2 mm | |
| Sector Size | 16K,8K,32K,64K | |
| Standby Current-Max | 0.0001 A | |
| Supply Current-Max | 0.02 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.5 mm | |
| Terminal Position | DUAL | |
| Toggle Bit | YES | |
| Type | NOR TYPE | |
| Width | 12 mm |
Alternate Parts for M29W800DB70N1
This table gives cross-reference parts and alternative options found for M29W800DB70N1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M29W800DB70N1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| S29AL008J70TFI023 | Infineon Technologies AG | $1.8606 | Flash, 512KX16, 70ns, PDSO48, | M29W800DB70N1 vs S29AL008J70TFI023 |
| AM29DL800BB70FC | AMD | Check for Price | Flash, 512KX16, 70ns, PDSO48, REVERSE, MO-142DD, TSOP-48 | M29W800DB70N1 vs AM29DL800BB70FC |
| S29AL008J70TFN023 | Infineon Technologies AG | Check for Price | Flash, 512KX16, 70ns, PDSO48, | M29W800DB70N1 vs S29AL008J70TFN023 |
| M29W800FT7AN3T | Numonyx Memory Solutions | Check for Price | Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | M29W800DB70N1 vs M29W800FT7AN3T |
| MX29LV800BTI-70R | Macronix International Co Ltd | Check for Price | Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142, TSOP1-48 | M29W800DB70N1 vs MX29LV800BTI-70R |
| S29AL008D70TAI023 | Spansion | Check for Price | Flash, 512KX16, 70ns, PDSO48, MO-142BDD, TSOP-48 | M29W800DB70N1 vs S29AL008D70TAI023 |
| M29W800FB7AN3E | Micron Technology Inc | Check for Price | Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | M29W800DB70N1 vs M29W800FB7AN3E |
| AM29DL800BB70FC | Spansion | Check for Price | Flash, 512KX16, 70ns, PDSO48, REVERSE, MO-142DD, TSOP-48 | M29W800DB70N1 vs AM29DL800BB70FC |
| M28W800BT70N6T | STMicroelectronics | Check for Price | 512KX16 FLASH 3V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | M29W800DB70N1 vs M28W800BT70N6T |
| MX29LV800CBTI-70 | Macronix International Co Ltd | Check for Price | Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, MO-142, TSOP1-48 | M29W800DB70N1 vs MX29LV800CBTI-70 |
M29W800DB70N1 Frequently Asked Questions (FAQ)
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The recommended operating voltage range for the M29W800DB70N1 is 2.7V to 3.6V, with a typical voltage of 3.3V.
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During power-up, the HOLD# signal should be kept high until the power supply has reached the recommended operating voltage range. During power-down, the HOLD# signal should be kept low to prevent any unwanted writes or erases.
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The WP# signal is used to protect the memory from unwanted writes or erases. When WP# is low, the memory is write-protected, and when WP# is high, the memory is writable. You can use WP# to protect specific sectors or the entire memory array.
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To perform a sector erase, you need to send the sector erase command (0x20) followed by the sector address. The timing requirements include a minimum of 10us for the erase pulse width and a maximum of 80us for the erase timeout.
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The M29W800DB70N1 has a maximum of 100,000 erase cycles per sector. Exceeding this limit can reduce the device's lifespan and affect its reliability. It's essential to implement wear leveling and error correction mechanisms to minimize the impact of erase cycles on the device's lifespan.