Part Details for M29W400DB70N6E by STMicroelectronics
Results Overview of M29W400DB70N6E by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
M29W400DB70N6E Information
M29W400DB70N6E by STMicroelectronics is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for M29W400DB70N6E
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 5 |
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RFQ |
Part Details for M29W400DB70N6E
M29W400DB70N6E CAD Models
M29W400DB70N6E Part Data Attributes
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M29W400DB70N6E
STMicroelectronics
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Datasheet
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M29W400DB70N6E
STMicroelectronics
256KX16 FLASH 3V PROM, 70ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TSOP | |
| Package Description | 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 | |
| Pin Count | 48 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Access Time-Max | 70 ns | |
| Additional Feature | BOTTOM BOOT BLOCK | |
| Alternate Memory Width | 8 | |
| Boot Block | BOTTOM | |
| Command User Interface | YES | |
| Data Polling | YES | |
| JESD-30 Code | R-PDSO-G48 | |
| JESD-609 Code | e3 | |
| Length | 18.4 mm | |
| Memory Density | 4194304 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 1 | |
| Number of Functions | 1 | |
| Number of Sectors/Size | 1,2,1,7 | |
| Number of Terminals | 48 | |
| Number of Words | 262144 words | |
| Number of Words Code | 256000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 256KX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSSOP | |
| Package Equivalence Code | TSSOP48,.8,20 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
| Parallel/Serial | PARALLEL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Programming Voltage | 3 V | |
| Qualification Status | Not Qualified | |
| Ready/Busy | YES | |
| Seated Height-Max | 1.2 mm | |
| Sector Size | 16K,8K,32K,64K | |
| Standby Current-Max | 0.0001 A | |
| Supply Current-Max | 0.02 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.5 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Toggle Bit | YES | |
| Type | NOR TYPE | |
| Width | 12 mm |
Alternate Parts for M29W400DB70N6E
This table gives cross-reference parts and alternative options found for M29W400DB70N6E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M29W400DB70N6E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| M29W400DT70N6T | STMicroelectronics | Check for Price | 256KX16 FLASH 3V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | M29W400DB70N6E vs M29W400DT70N6T |
| M29W400DB70N6T | STMicroelectronics | Check for Price | 256KX16 FLASH 3V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | M29W400DB70N6E vs M29W400DB70N6T |
| AM29DL400BT-70FI | AMD | Check for Price | Flash, 256KX16, 70ns, PDSO48, REVERSE, MO-142DD, TSOP-48 | M29W400DB70N6E vs AM29DL400BT-70FI |
| AM29LV400BB70FC | AMD | Check for Price | Flash, 256KX16, 70ns, PDSO48, REVERSE, MO-142B, TSOP-48 | M29W400DB70N6E vs AM29LV400BB70FC |
| AM29DL400BB-70EI | AMD | Check for Price | Flash, 256KX16, 70ns, PDSO48, MO-142DD, TSOP-48 | M29W400DB70N6E vs AM29DL400BB-70EI |
| AM29LV400BB70FE | AMD | Check for Price | Flash, 256KX16, 70ns, PDSO48, REVERSE, MO-142B, TSOP-48 | M29W400DB70N6E vs AM29LV400BB70FE |
| M29W400DB70N6 | STMicroelectronics | Check for Price | 256KX16 FLASH 3V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | M29W400DB70N6E vs M29W400DB70N6 |
| MBM29LV400TC-70PFTR | FUJITSU Limited | Check for Price | Flash, 256KX16, 70ns, PDSO48, PLASTIC, REVERSE, TSOP1-48 | M29W400DB70N6E vs MBM29LV400TC-70PFTR |
| AM29DL400BB-70FC | AMD | Check for Price | Flash, 256KX16, 70ns, PDSO48, REVERSE, MO-142DD, TSOP-48 | M29W400DB70N6E vs AM29DL400BB-70FC |
| M29W400DB70N6T | Numonyx Memory Solutions | Check for Price | Flash, 256KX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | M29W400DB70N6E vs M29W400DB70N6T |
M29W400DB70N6E Frequently Asked Questions (FAQ)
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The recommended operating voltage range for the M29W400DB70N6E is 2.7V to 3.6V.
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During power-up, the HOLD signal should be kept low until the power supply has reached a stable voltage. During power-down, the HOLD signal should be kept low until the power supply has dropped below 2.2V.
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The M29W400DB70N6E supports up to 100,000 erase cycles.
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Wear leveling can be implemented by distributing erase cycles across the entire memory array, using techniques such as dynamic wear leveling or static wear leveling.
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The recommended method for detecting the end of an erase operation is to monitor the R/B# pin, which goes low when the erase operation is complete.