Part Details for M29W160ET70ZA6F by Micron Technology Inc
Results Overview of M29W160ET70ZA6F by Micron Technology Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
M29W160ET70ZA6F Information
M29W160ET70ZA6F by Micron Technology Inc is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for M29W160ET70ZA6F
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
M29W160ET70ZA6F
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Avnet Silica | NOR Flash Parallel 3V33V 16Mbit 2M1M x 8bit16bit 70ns 48Pin TFBGA TR (Alt: M29W160ET70ZA6F) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Win Source Electronics | NOR Flash Parallel 3V/3.3V 16M-bit 2M x 8/1M x 16 70ns 48-Pin TFBGA T/R / IC FLASH 16MBIT 70NS 48TFBGA | 22000 |
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$1.4576 / $2.1853 | Buy Now |
Part Details for M29W160ET70ZA6F
M29W160ET70ZA6F CAD Models
M29W160ET70ZA6F Part Data Attributes
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M29W160ET70ZA6F
Micron Technology Inc
Buy Now
Datasheet
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Compare Parts:
M29W160ET70ZA6F
Micron Technology Inc
Flash, 1MX16, 70ns, PBGA48, TFBGA-48
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICRON TECHNOLOGY INC | |
Part Package Code | BGA | |
Package Description | TFBGA-48 | |
Pin Count | 48 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.51 | |
Access Time-Max | 70 ns | |
Additional Feature | TOP BOOT BLOCK | |
Alternate Memory Width | 8 | |
Boot Block | TOP | |
Command User Interface | YES | |
Common Flash Interface | YES | |
Data Polling | YES | |
JESD-30 Code | R-PBGA-B48 | |
JESD-609 Code | e1 | |
Length | 8 mm | |
Memory Density | 16777216 bit | |
Memory IC Type | FLASH | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Sectors/Size | 1,2,1,31 | |
Number of Terminals | 48 | |
Number of Words | 1048576 words | |
Number of Words Code | 1000000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 1MX16 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TFBGA | |
Package Equivalence Code | BGA48,6X8,32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
Parallel/Serial | PARALLEL | |
Programming Voltage | 3 V | |
Qualification Status | Not Qualified | |
Ready/Busy | YES | |
Seated Height-Max | 1.2 mm | |
Sector Size | 16K,8K,32K,64K | |
Standby Current-Max | 0.0001 A | |
Supply Current-Max | 0.02 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 2.7 V | |
Supply Voltage-Nom (Vsup) | 3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Toggle Bit | YES | |
Type | NOR TYPE | |
Width | 6 mm |
Alternate Parts for M29W160ET70ZA6F
This table gives cross-reference parts and alternative options found for M29W160ET70ZA6F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M29W160ET70ZA6F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
M29W160ET70ZA6T | STMicroelectronics | Check for Price | 1MX16 FLASH 3V PROM, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, TFBGA-48 | M29W160ET70ZA6F vs M29W160ET70ZA6T |
M29W160ET70ZA6 | Numonyx Memory Solutions | Check for Price | Flash, 1MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, TFBGA-48 | M29W160ET70ZA6F vs M29W160ET70ZA6 |
M29W160ET7AZA6T | Micron Technology Inc | Check for Price | Flash, 1MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, TFBGA-48 | M29W160ET70ZA6F vs M29W160ET7AZA6T |
M29W160ET7AZA6F | Micron Technology Inc | Check for Price | Flash, 1MX16, 70ns, PBGA48, TFBGA-48 | M29W160ET70ZA6F vs M29W160ET7AZA6F |
M29W160ET70ZA6E | Micron Technology Inc | Check for Price | Flash, 1MX16, 70ns, PBGA48, TFBGA-48 | M29W160ET70ZA6F vs M29W160ET70ZA6E |
M29W160ET70ZA6F | Numonyx Memory Solutions | Check for Price | Flash, 1MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48 | M29W160ET70ZA6F vs M29W160ET70ZA6F |
M29W160ET7AZA6E | Micron Technology Inc | Check for Price | Flash, 1MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48 | M29W160ET70ZA6F vs M29W160ET7AZA6E |
M29W160FT7AZA6F6 | Numonyx Memory Solutions | Check for Price | Flash, 1MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48 | M29W160ET70ZA6F vs M29W160FT7AZA6F6 |
M29W160ET70ZA6F | STMicroelectronics | Check for Price | 1MX16 FLASH 3V PROM, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-48 | M29W160ET70ZA6F vs M29W160ET70ZA6F |
M29W160ET70ZA6T | Numonyx Memory Solutions | Check for Price | Flash, 1MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, TFBGA-48 | M29W160ET70ZA6F vs M29W160ET70ZA6T |
M29W160ET70ZA6F Frequently Asked Questions (FAQ)
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The M29W160ET70ZA6F has an operating temperature range of -40°C to 85°C.
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The device requires a controlled power-up and power-down sequence to prevent latch-up and ensure proper operation. A recommended power-up sequence is to apply VCC before VPP, and a recommended power-down sequence is to remove VPP before VCC.
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The recommended voltage for the VPP pin is 12V ± 0.5V for programming and erasing operations.
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To prevent bus contention during read operations, ensure that the output buffers are disabled by setting the OE# pin high before switching the address lines.
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The WP# pin is a write-protect pin that allows the device to be write-protected. To enable write protection, tie the WP# pin to VCC. To disable write protection, tie the WP# pin to GND.