Part Details for M29W160ET70ZA6E by Micron Technology Inc
Results Overview of M29W160ET70ZA6E by Micron Technology Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
M29W160ET70ZA6E Information
M29W160ET70ZA6E by Micron Technology Inc is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for M29W160ET70ZA6E
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
M29W160ET70ZA6E
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Avnet Silica | NOR Flash Parallel 3V33V 16Mbit 2M1M x 8bit16bit 70ns 48Pin TFBGA Tray (Alt: M29W160ET70ZA6E) RoHS: Compliant Min Qty: 1122 Package Multiple: 1122 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
M29W160ET70ZA6E
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EBV Elektronik | NOR Flash Parallel 3V33V 16Mbit 2M1M x 8bit16bit 70ns 48Pin TFBGA Tray (Alt: M29W160ET70ZA6E) RoHS: Compliant Min Qty: 1122 Package Multiple: 1122 | EBV - 0 |
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Buy Now |
Part Details for M29W160ET70ZA6E
M29W160ET70ZA6E CAD Models
M29W160ET70ZA6E Part Data Attributes
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M29W160ET70ZA6E
Micron Technology Inc
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Datasheet
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M29W160ET70ZA6E
Micron Technology Inc
Flash, 1MX16, 70ns, PBGA48, TFBGA-48
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICRON TECHNOLOGY INC | |
Part Package Code | BGA | |
Package Description | TFBGA, BGA48,6X8,32 | |
Pin Count | 48 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.51 | |
Samacsys Manufacturer | Micron | |
Access Time-Max | 70 ns | |
Additional Feature | TOP BOOT BLOCK | |
Alternate Memory Width | 8 | |
Boot Block | TOP | |
Command User Interface | YES | |
Common Flash Interface | YES | |
Data Polling | YES | |
JESD-30 Code | R-PBGA-B48 | |
JESD-609 Code | e1 | |
Length | 8 mm | |
Memory Density | 16777216 bit | |
Memory IC Type | FLASH | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Sectors/Size | 1,2,1,31 | |
Number of Terminals | 48 | |
Number of Words | 1048576 words | |
Number of Words Code | 1000000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 1MX16 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TFBGA | |
Package Equivalence Code | BGA48,6X8,32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
Parallel/Serial | PARALLEL | |
Programming Voltage | 3 V | |
Qualification Status | Not Qualified | |
Ready/Busy | YES | |
Seated Height-Max | 1.2 mm | |
Sector Size | 16K,8K,32K,64K | |
Standby Current-Max | 0.0001 A | |
Supply Current-Max | 0.02 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 2.7 V | |
Supply Voltage-Nom (Vsup) | 3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Toggle Bit | YES | |
Type | NOR TYPE | |
Width | 6 mm |
Alternate Parts for M29W160ET70ZA6E
This table gives cross-reference parts and alternative options found for M29W160ET70ZA6E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M29W160ET70ZA6E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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M29W160ET70ZA6T | STMicroelectronics | Check for Price | 1MX16 FLASH 3V PROM, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, TFBGA-48 | M29W160ET70ZA6E vs M29W160ET70ZA6T |
M29W160ET70ZA6F | Micron Technology Inc | Check for Price | Flash, 1MX16, 70ns, PBGA48, TFBGA-48 | M29W160ET70ZA6E vs M29W160ET70ZA6F |
M29W160ET70ZA6 | Numonyx Memory Solutions | Check for Price | Flash, 1MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, TFBGA-48 | M29W160ET70ZA6E vs M29W160ET70ZA6 |
M29W160ET7AZA6T | Micron Technology Inc | Check for Price | Flash, 1MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, TFBGA-48 | M29W160ET70ZA6E vs M29W160ET7AZA6T |
M29W160ET7AZA6F | Micron Technology Inc | Check for Price | Flash, 1MX16, 70ns, PBGA48, TFBGA-48 | M29W160ET70ZA6E vs M29W160ET7AZA6F |
M29W160ET70ZA6F | Numonyx Memory Solutions | Check for Price | Flash, 1MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48 | M29W160ET70ZA6E vs M29W160ET70ZA6F |
M29W160ET7AZA6E | Micron Technology Inc | Check for Price | Flash, 1MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48 | M29W160ET70ZA6E vs M29W160ET7AZA6E |
M29W160FT7AZA6F6 | Numonyx Memory Solutions | Check for Price | Flash, 1MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48 | M29W160ET70ZA6E vs M29W160FT7AZA6F6 |
M29W160ET70ZA6F | STMicroelectronics | Check for Price | 1MX16 FLASH 3V PROM, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-48 | M29W160ET70ZA6E vs M29W160ET70ZA6F |
M29W160ET70ZA6T | Numonyx Memory Solutions | Check for Price | Flash, 1MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, TFBGA-48 | M29W160ET70ZA6E vs M29W160ET70ZA6T |
M29W160ET70ZA6E Frequently Asked Questions (FAQ)
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The M29W160ET70ZA6E has an operating temperature range of -40°C to 85°C.
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The device requires a power-up sequence of VCC first, then VPP, and a power-down sequence of VPP first, then VCC. This ensures proper device operation and prevents latch-up.
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A 4-layer PCB with a solid ground plane and separate power planes for VCC and VPP is recommended. Route signals away from noise sources and keep signal traces short and direct.
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Use a clock signal with a rise and fall time of <5ns, and ensure signal traces are impedance-controlled and terminated properly to prevent reflections and ringing.
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The device has built-in ESD protection diodes and latch-up prevention circuits. However, it's still important to follow proper ESD handling procedures and use a latch-up prevention circuit on the PCB if necessary.