Part Details for M29W160EB70ZA6E by STMicroelectronics
Results Overview of M29W160EB70ZA6E by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
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Agriculture Technology
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Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Automotive
Education and Research
Consumer Electronics
Security and Surveillance
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Computing and Data Storage
Healthcare
Entertainment and Gaming
M29W160EB70ZA6E Information
M29W160EB70ZA6E by STMicroelectronics is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for M29W160EB70ZA6E
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | 16 MBIT PARALLEL NOR FLASH EMBEDDED MEMORY Flash, 1MX16, 70ns, PBGA48 ECCN: EAR99 RoHS: Compliant |
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RFQ |
Part Details for M29W160EB70ZA6E
M29W160EB70ZA6E CAD Models
M29W160EB70ZA6E Part Data Attributes
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M29W160EB70ZA6E
STMicroelectronics
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Datasheet
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M29W160EB70ZA6E
STMicroelectronics
1MX16 FLASH 3V PROM, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, TFBGA-48
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | BGA | |
| Package Description | 6 X 8 MM, 0.80 MM PITCH, TFBGA-48 | |
| Pin Count | 48 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Access Time-Max | 70 ns | |
| Additional Feature | BOTTOM BOOT BLOCK | |
| Alternate Memory Width | 8 | |
| Boot Block | BOTTOM | |
| Command User Interface | YES | |
| Common Flash Interface | YES | |
| Data Polling | YES | |
| JESD-30 Code | R-PBGA-B48 | |
| JESD-609 Code | e1 | |
| Length | 8 mm | |
| Memory Density | 16777216 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Sectors/Size | 1,2,1,31 | |
| Number of Terminals | 48 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 1MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA48,6X8,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Parallel/Serial | PARALLEL | |
| Programming Voltage | 3 V | |
| Qualification Status | Not Qualified | |
| Ready/Busy | YES | |
| Seated Height-Max | 1.2 mm | |
| Sector Size | 16K,8K,32K,64K | |
| Standby Current-Max | 0.0001 A | |
| Supply Current-Max | 0.02 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Toggle Bit | YES | |
| Type | NOR TYPE | |
| Width | 6 mm |
Alternate Parts for M29W160EB70ZA6E
This table gives cross-reference parts and alternative options found for M29W160EB70ZA6E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M29W160EB70ZA6E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| M29W160EB7AZA6F | Micron Technology Inc | Check for Price | Flash, 1MX16, 70ns, PBGA48, TFBGA-48 | M29W160EB70ZA6E vs M29W160EB7AZA6F |
| M29W160EB70ZA6 | Numonyx Memory Solutions | Check for Price | Flash, 1MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, TFBGA-48 | M29W160EB70ZA6E vs M29W160EB70ZA6 |
| M29W160EB7AZA6T | Micron Technology Inc | Check for Price | Flash, 1MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, TFBGA-48 | M29W160EB70ZA6E vs M29W160EB7AZA6T |
| M29W160FB7AZA6E6 | Numonyx Memory Solutions | Check for Price | Flash, 1MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48 | M29W160EB70ZA6E vs M29W160FB7AZA6E6 |
M29W160EB70ZA6E Frequently Asked Questions (FAQ)
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The maximum operating frequency of the M29W160EB70ZA6E is 90 MHz.
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The hold signal (HOLD#) should be asserted low to pause the current read operation and tri-state the output buffers. De-asserting HOLD# resumes the read operation.
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The write protect (WP#) signal is used to prevent accidental writes to the device. When WP# is asserted low, the device is write-protected.
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To perform a sector erase operation, send the erase command (0x20) followed by the sector address. The device will then erase the specified sector.
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The recommended power-up sequence is to apply VCC first, followed by VPP (if used), and then the clock signal.