Part Details for M29W160EB70ZA6 by Micron Technology Inc
Results Overview of M29W160EB70ZA6 by Micron Technology Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Internet of Things (IoT)
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Agriculture Technology
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Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Automotive
Education and Research
Consumer Electronics
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M29W160EB70ZA6 Information
M29W160EB70ZA6 by Micron Technology Inc is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for M29W160EB70ZA6
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
M29W160EB70ZA6
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Avnet Americas | - Trays (Alt: M29W160EB70ZA6) RoHS: Not Compliant Min Qty: 1122 Package Multiple: 1122 Lead time: 18 Weeks, 0 Days Container: Tray | 0 |
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RFQ |
Part Details for M29W160EB70ZA6
M29W160EB70ZA6 CAD Models
M29W160EB70ZA6 Part Data Attributes
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M29W160EB70ZA6
Micron Technology Inc
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Datasheet
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M29W160EB70ZA6
Micron Technology Inc
Flash, 1MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, TFBGA-48
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Part Package Code | BGA | |
| Package Description | 6 X 8 MM, 0.80 MM PITCH, TFBGA-48 | |
| Pin Count | 48 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| Factory Lead Time | 18 Weeks | |
| Access Time-Max | 70 ns | |
| Additional Feature | BOTTOM BOOT BLOCK | |
| Alternate Memory Width | 8 | |
| Boot Block | BOTTOM | |
| Command User Interface | YES | |
| Common Flash Interface | YES | |
| Data Polling | YES | |
| JESD-30 Code | R-PBGA-B48 | |
| JESD-609 Code | e0 | |
| Length | 8 mm | |
| Memory Density | 16777216 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Sectors/Size | 1,2,1,31 | |
| Number of Terminals | 48 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 1MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA48,6X8,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Parallel/Serial | PARALLEL | |
| Peak Reflow Temperature (Cel) | 235 | |
| Programming Voltage | 3 V | |
| Qualification Status | Not Qualified | |
| Ready/Busy | YES | |
| Seated Height-Max | 1.2 mm | |
| Sector Size | 16K,8K,32K,64K | |
| Standby Current-Max | 0.0001 A | |
| Supply Current-Max | 0.02 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | Tin/Lead/Silver (Sn/Pb/Ag) | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Toggle Bit | YES | |
| Type | NOR TYPE | |
| Width | 6 mm |
Alternate Parts for M29W160EB70ZA6
This table gives cross-reference parts and alternative options found for M29W160EB70ZA6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M29W160EB70ZA6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| M29W160EB70ZA6F | Numonyx Memory Solutions | Check for Price | Flash, 1MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48 | M29W160EB70ZA6 vs M29W160EB70ZA6F |
| M29W160FB7AZA6E6 | Numonyx Memory Solutions | Check for Price | Flash, 1MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48 | M29W160EB70ZA6 vs M29W160FB7AZA6E6 |
| M29W160EB70ZA6F | STMicroelectronics | Check for Price | 1MX16 FLASH 3V PROM, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, TFBGA-48 | M29W160EB70ZA6 vs M29W160EB70ZA6F |
| M29W160FB7AZA6F6 | Numonyx Memory Solutions | Check for Price | Flash, 1MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48 | M29W160EB70ZA6 vs M29W160FB7AZA6F6 |
| M29W160EB7AZA6T | Micron Technology Inc | Check for Price | Flash, 1MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, TFBGA-48 | M29W160EB70ZA6 vs M29W160EB7AZA6T |
| M29W160EB70ZA6E | Numonyx Memory Solutions | Check for Price | Flash, 1MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48 | M29W160EB70ZA6 vs M29W160EB70ZA6E |
M29W160EB70ZA6 Frequently Asked Questions (FAQ)
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The M29W160EB70ZA6 has a minimum of 100,000 erase cycles per sector, and a total of 1,000,000 erase cycles for the entire device.
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The HOLD# signal should be asserted low to pause the current operation, and de-asserted high to resume the operation. Note that HOLD# should not be asserted during erase or program operations.
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The recommended power-up sequence is to apply VCC first, followed by VPP (if used), and then the clock signal. The device should be in a standby state (CE# high) during power-up.
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The device density and organization can be determined by reading the device ID and configuration registers. The M29W160EB70ZA6 has a density of 16 Mbits and is organized as 1024 sectors of 16 Kbytes each.
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The WEL is used to enable or disable write operations to the device. To write to the device, WEL must be set high before issuing a write command. WEL should be cleared low after the write operation is complete to prevent accidental writes.