Part Details for M29W160EB70N6E by Numonyx Memory Solutions
Results Overview of M29W160EB70N6E by Numonyx Memory Solutions
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
M29W160EB70N6E Information
M29W160EB70N6E by Numonyx Memory Solutions is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for M29W160EB70N6E
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
93K7361
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Newark | Nor Flash Memory Ic, Memory Size:16Mbit, Memory Organization:1M X 16/2M X 8, Access Time, Tacc:70Ns, No. Of Pins:48, Operating Temperature Range:-40°C To +85°C, Ic Generic Number:29W160, Interface Type:Parallel Rohs Compliant: Yes |Numonyx M29W160EB70N6E RoHS: Compliant Min Qty: 576 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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Vyrian | Memory ICs | 1538 |
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RFQ |
Part Details for M29W160EB70N6E
M29W160EB70N6E CAD Models
M29W160EB70N6E Part Data Attributes
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M29W160EB70N6E
Numonyx Memory Solutions
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Datasheet
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Compare Parts:
M29W160EB70N6E
Numonyx Memory Solutions
Flash, 1MX16, 70ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NUMONYX | |
Part Package Code | TSOP | |
Package Description | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | |
Pin Count | 48 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.51 | |
Access Time-Max | 70 ns | |
Additional Feature | BOTTOM BOOT BLOCK | |
Alternate Memory Width | 8 | |
Boot Block | BOTTOM | |
Command User Interface | YES | |
Common Flash Interface | YES | |
Data Polling | YES | |
JESD-30 Code | R-PDSO-G48 | |
Length | 18.4 mm | |
Memory Density | 16777216 bit | |
Memory IC Type | FLASH | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Sectors/Size | 1,2,1,31 | |
Number of Terminals | 48 | |
Number of Words | 1048576 words | |
Number of Words Code | 1000000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 1MX16 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSSOP | |
Package Equivalence Code | TSSOP48,.8,20 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
Parallel/Serial | PARALLEL | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Programming Voltage | 3 V | |
Qualification Status | Not Qualified | |
Ready/Busy | YES | |
Seated Height-Max | 1.2 mm | |
Sector Size | 16K,8K,32K,64K | |
Standby Current-Max | 0.0001 A | |
Supply Current-Max | 0.02 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 2.7 V | |
Supply Voltage-Nom (Vsup) | 3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.5 mm | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Toggle Bit | YES | |
Type | NOR TYPE | |
Width | 12 mm |
Alternate Parts for M29W160EB70N6E
This table gives cross-reference parts and alternative options found for M29W160EB70N6E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M29W160EB70N6E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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M29W160EB7AN6E | Micron Technology Inc | Check for Price | Flash, 1MX16, 70ns, PDSO48, TSOP-48 | M29W160EB70N6E vs M29W160EB7AN6E |
M29W160EB70N6F | Numonyx Memory Solutions | Check for Price | Flash, 1MX16, 70ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | M29W160EB70N6E vs M29W160EB70N6F |
M29W160FB7AN6E6 | Numonyx Memory Solutions | Check for Price | Flash, 1MX16, 70ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | M29W160EB70N6E vs M29W160FB7AN6E6 |
M29W160EB70N6T | STMicroelectronics | Check for Price | 1MX16 FLASH 3V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | M29W160EB70N6E vs M29W160EB70N6T |
M29W160EB70N6T | Micron Technology Inc | Check for Price | Flash, 1MX16, 70ns, PDSO48, 12 X 20 MM, TSOP-48 | M29W160EB70N6E vs M29W160EB70N6T |
M29W160EB7AN6F | Micron Technology Inc | Check for Price | Flash, 1MX16, 70ns, PDSO48, TSOP-48 | M29W160EB70N6E vs M29W160EB7AN6F |
M29W160EB70N6F | STMicroelectronics | Check for Price | 1MX16 FLASH 3V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | M29W160EB70N6E vs M29W160EB70N6F |
M29W160EB70N6E | STMicroelectronics | Check for Price | 1MX16 FLASH 3V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | M29W160EB70N6E vs M29W160EB70N6E |
M29W160FB7AN6F6 | Numonyx Memory Solutions | Check for Price | Flash, 1MX16, 70ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | M29W160EB70N6E vs M29W160FB7AN6F6 |
M29W160EB70N6F | Micron Technology Inc | Check for Price | Flash, 1MX16, 70ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | M29W160EB70N6E vs M29W160EB70N6F |
M29W160EB70N6E Frequently Asked Questions (FAQ)
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The M29W160EB70N6E has a minimum of 100,000 erase cycles per sector, and a total of 1,000,000 erase cycles for the entire device.
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The HOLD# signal should be asserted low to pause the current operation, and de-asserted high to resume the operation. Note that HOLD# should not be asserted during erase or program operations.
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The recommended method is to poll the RY/BY# signal, which goes low when the operation is in progress and high when it is complete. Alternatively, you can also use the DQ7 or DQ6 status bits to detect the end of the operation.
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The WP# signal should be asserted low to enable write protection, and de-asserted high to disable write protection. Note that WP# should be asserted before powering up the device to ensure write protection is enabled.
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The M29W160EB70N6E has an operating temperature range of -40°C to +85°C, and a storage temperature range of -65°C to +150°C.