Part Details for M29F400BB70N1 by STMicroelectronics
Results Overview of M29F400BB70N1 by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
M29F400BB70N1 Information
M29F400BB70N1 by STMicroelectronics is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for M29F400BB70N1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 334 |
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RFQ | ||
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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RFQ |
Part Details for M29F400BB70N1
M29F400BB70N1 CAD Models
M29F400BB70N1 Part Data Attributes
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M29F400BB70N1
STMicroelectronics
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Datasheet
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M29F400BB70N1
STMicroelectronics
256KX16 FLASH 5V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TSOP | |
| Package Description | 12 X 20 MM, PLASTIC, TSOP-48 | |
| Pin Count | 48 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Access Time-Max | 70 ns | |
| Additional Feature | BOTTOM BOOT BLOCK | |
| Alternate Memory Width | 8 | |
| Boot Block | BOTTOM | |
| Command User Interface | YES | |
| Data Polling | YES | |
| Endurance | 100000 Write/Erase Cycles | |
| JESD-30 Code | R-PDSO-G48 | |
| JESD-609 Code | e0 | |
| Length | 18.4 mm | |
| Memory Density | 4194304 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Sectors/Size | 1,2,1,7 | |
| Number of Terminals | 48 | |
| Number of Words | 262144 words | |
| Number of Words Code | 256000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 256KX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSSOP | |
| Package Equivalence Code | TSSOP48,.8,20 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
| Parallel/Serial | PARALLEL | |
| Programming Voltage | 5 V | |
| Qualification Status | Not Qualified | |
| Ready/Busy | YES | |
| Seated Height-Max | 1.2 mm | |
| Sector Size | 16K,8K,32K,64K | |
| Standby Current-Max | 0.0001 A | |
| Supply Current-Max | 0.02 mA | |
| Supply Voltage-Max (Vsup) | 5.5 V | |
| Supply Voltage-Min (Vsup) | 4.5 V | |
| Supply Voltage-Nom (Vsup) | 5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.5 mm | |
| Terminal Position | DUAL | |
| Toggle Bit | YES | |
| Type | NOR TYPE | |
| Width | 12 mm |
Alternate Parts for M29F400BB70N1
This table gives cross-reference parts and alternative options found for M29F400BB70N1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M29F400BB70N1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| AM29F400BT-70FI | AMD | Check for Price | Flash, 256KX16, 70ns, PDSO48, REVERSE, MO-142DD, TSOP-48 | M29F400BB70N1 vs AM29F400BT-70FI |
| AM29F400BB-70EE | AMD | Check for Price | Flash, 256KX16, 70ns, PDSO48, MO-142DD, TSOP-48 | M29F400BB70N1 vs AM29F400BB-70EE |
| AM29F400BB-70FC | AMD | Check for Price | Flash, 256KX16, 70ns, PDSO48, REVERSE, MO-142DD, TSOP-48 | M29F400BB70N1 vs AM29F400BB-70FC |
| M29F400BT70N1E | STMicroelectronics | Check for Price | 256KX16 FLASH 5V PROM, 70ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 | M29F400BB70N1 vs M29F400BT70N1E |
| AM29F400BB-70FI | AMD | Check for Price | Flash, 256KX16, 70ns, PDSO48, REVERSE, MO-142DD, TSOP-48 | M29F400BB70N1 vs AM29F400BB-70FI |
| AM29F400BT-70EC | AMD | Check for Price | Flash, 256KX16, 70ns, PDSO48, MO-142DD, TSOP-48 | M29F400BB70N1 vs AM29F400BT-70EC |
| MX29F400BTC70G | Macronix International Co Ltd | Check for Price | 256KX16 FLASH 5V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48 | M29F400BB70N1 vs MX29F400BTC70G |
| M29F400BT70N6F | STMicroelectronics | Check for Price | 256KX16 FLASH 5V PROM, 70ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 | M29F400BB70N1 vs M29F400BT70N6F |
| M29F400BB90N3 | STMicroelectronics | Check for Price | 256KX16 FLASH 5V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | M29F400BB70N1 vs M29F400BB90N3 |
| M29F400B-70N3 | STMicroelectronics | Check for Price | 256KX16 FLASH 5V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | M29F400BB70N1 vs M29F400B-70N3 |
M29F400BB70N1 Frequently Asked Questions (FAQ)
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The M29F400BB70N1 has a minimum of 100,000 erase cycles per sector, and a total of 1,000,000 erase cycles per device.
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During power-up, HOLD# and OE# should be kept high until the power supply reaches the minimum operating voltage (VCC(min)). During power-down, HOLD# and OE# should be kept high until the power supply reaches 0V.
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The recommended method is to use the RY/BY# signal, which goes low during a program or erase operation and returns high when the operation is complete.
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Yes, but the power-up ramp should be faster than 10 ms/V to ensure proper device operation. If the power-up ramp is slower, additional circuitry may be required to delay the device's power-on reset.
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The WP# signal should be tied high or low depending on the desired write protection configuration. If left floating, the device may not operate correctly.