Part Details for M28W160CB70N6E by Numonyx Memory Solutions
Results Overview of M28W160CB70N6E by Numonyx Memory Solutions
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
M28W160CB70N6E Information
M28W160CB70N6E by Numonyx Memory Solutions is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for M28W160CB70N6E
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
93K7342
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Newark | Flash, 16Mbit, 70Ns, Tsop-48, Flash Memory Type:Parallel Nor, Memory Configuration:1M X 16Bit, Interfaces:Parallel, Ic Case/Package:Tsop, No. Of Pins:48Pins, Clock Frequency Max:-, Access Time:70Ns, Supply Voltage Min:2.7V Rohs Compliant: Yes |Numonyx M28W160CB70N6E RoHS: Compliant Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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Vyrian | Memory ICs | 1577 |
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RFQ |
Part Details for M28W160CB70N6E
M28W160CB70N6E CAD Models
M28W160CB70N6E Part Data Attributes
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M28W160CB70N6E
Numonyx Memory Solutions
Buy Now
Datasheet
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Compare Parts:
M28W160CB70N6E
Numonyx Memory Solutions
Flash, 1MX16, 70ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NUMONYX | |
| Part Package Code | TSOP | |
| Package Description | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | |
| Pin Count | 48 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| Access Time-Max | 70 ns | |
| Additional Feature | BOTTOM BOOT BLOCK | |
| Boot Block | BOTTOM | |
| Command User Interface | YES | |
| Common Flash Interface | YES | |
| Data Polling | NO | |
| JESD-30 Code | R-PDSO-G48 | |
| JESD-609 Code | e3/e6 | |
| Length | 18.4 mm | |
| Memory Density | 16777216 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Sectors/Size | 8,31 | |
| Number of Terminals | 48 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 1MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP1 | |
| Package Equivalence Code | TSSOP48,.8,20 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Parallel/Serial | PARALLEL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Programming Voltage | 3 V | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.2 mm | |
| Sector Size | 4K,32K | |
| Standby Current-Max | 0.000006 A | |
| Supply Current-Max | 0.02 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.5 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Toggle Bit | NO | |
| Type | NOR TYPE | |
| Width | 12 mm |
Alternate Parts for M28W160CB70N6E
This table gives cross-reference parts and alternative options found for M28W160CB70N6E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M28W160CB70N6E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MX29LV160BBTI-70 | Macronix International Co Ltd | Check for Price | Flash, 1MX16, 70ns, PDSO48, 12 X 20 MM, MO-142, TSOP1-48 | M28W160CB70N6E vs MX29LV160BBTI-70 |
| M28W160CB70N1S | Numonyx Memory Solutions | Check for Price | Flash, 1MX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | M28W160CB70N6E vs M28W160CB70N1S |
| M29W160DT70N1E | STMicroelectronics | Check for Price | 1MX16 FLASH 3V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | M28W160CB70N6E vs M29W160DT70N1E |
| MBM29DL164TE-70TN | FUJITSU Limited | Check for Price | Flash, 1MX16, 70ns, PDSO48, PLASTIC, TSOP1-48 | M28W160CB70N6E vs MBM29DL164TE-70TN |
| MX29LV160BTI-70R | Macronix International Co Ltd | Check for Price | Flash, 1MX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48 | M28W160CB70N6E vs MX29LV160BTI-70R |
| M28W160CT70N1F | STMicroelectronics | Check for Price | 1MX16 FLASH 3V PROM, 70ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 | M28W160CB70N6E vs M28W160CT70N1F |
| MBM29DL164BD-70PFTN-E1 | Spansion | Check for Price | Flash, 1MX16, 70ns, PDSO48, PLASTIC, TSOP1-48 | M28W160CB70N6E vs MBM29DL164BD-70PFTN-E1 |
| MX28F160C3BTI-70G | Macronix International Co Ltd | Check for Price | Flash, 1MX16, 70ns, PDSO48, 12 X 20 MM, MO-142, TSOP1-48 | M28W160CB70N6E vs MX28F160C3BTI-70G |
| M28W160ECB70N1F | STMicroelectronics | Check for Price | 1MX16 FLASH 3V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | M28W160CB70N6E vs M28W160ECB70N1F |
| S29AL016J70TFI040 | Spansion | Check for Price | Flash, 1MX16, 70ns, PDSO48, LEAD FREE, MO-142DDD, TSOP-48 | M28W160CB70N6E vs S29AL016J70TFI040 |
M28W160CB70N6E Frequently Asked Questions (FAQ)
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The recommended operating voltage range for the M28W160CB70N6E is 2.7V to 3.6V.
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The device has a built-in power-on reset circuit that ensures the device is in a known state after power-up. No external reset circuitry is required.
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The M28W160CB70N6E supports clock frequencies up to 104 MHz.
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Wear leveling is not necessary for this device, as it has built-in wear leveling and block management algorithms to ensure even wear across the memory array.
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The typical programming time for the M28W160CB70N6E is 10-15 seconds for a full 16MB erase and program cycle.