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256K X 8 FLASH 2.7V PROM, PDSO8, 0.150 INCH, SOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
M25P20-VMN6 by STMicroelectronics is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 4 |
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RFQ |
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M25P20-VMN6
STMicroelectronics
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Datasheet
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M25P20-VMN6
STMicroelectronics
256K X 8 FLASH 2.7V PROM, PDSO8, 0.150 INCH, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | SOIC | |
Package Description | SOP-8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.51 | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | 40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST | |
Clock Frequency-Max (fCLK) | 50 MHz | |
Data Retention Time-Min | 20 | |
Endurance | 100000 Write/Erase Cycles | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e0 | |
Length | 4.9 mm | |
Memory Density | 2097152 bit | |
Memory IC Type | FLASH | |
Memory Width | 8 | |
Number of Functions | 1 | |
Number of Terminals | 8 | |
Number of Words | 262144 words | |
Number of Words Code | 256000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 256KX8 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | SOP | |
Package Equivalence Code | SOP8,.25 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Parallel/Serial | SERIAL | |
Programming Voltage | 2.7 V | |
Qualification Status | Not Qualified | |
Seated Height-Max | 1.75 mm | |
Serial Bus Type | SPI | |
Standby Current-Max | 0.000005 A | |
Supply Current-Max | 0.015 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 2.7 V | |
Supply Voltage-Nom (Vsup) | 3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 1.27 mm | |
Terminal Position | DUAL | |
Type | NOR TYPE | |
Width | 3.9 mm | |
Write Protection | HARDWARE/SOFTWARE |
This table gives cross-reference parts and alternative options found for M25P20-VMN6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M25P20-VMN6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
M25P20SVMN3TG/X | Numonyx Memory Solutions | Check for Price | Flash, 256KX8, PDSO8, SOP-8 | M25P20-VMN6 vs M25P20SVMN3TG/X |
M25P20SVMN6TPB | Micron Technology Inc | Check for Price | Flash, 2MX1, PDSO8, 0.150 INCH, ROHS COMPLIANT, SOP-8 | M25P20-VMN6 vs M25P20SVMN6TPB |
M25P20-VMN3G | STMicroelectronics | Check for Price | 256K X 8 FLASH 2.7V PROM, PDSO8, 0.150 INCH, ANTIMONY, TBBP-A FREE AND ROHS COMPLIANT, SOP-8 | M25P20-VMN6 vs M25P20-VMN3G |
The maximum operating frequency of the M25P20-VMN6 is 75 MHz.
The M25P20-VMN6 supports byte-level writing, and up to 256 bytes can be written in a single operation.
The WP# (Write Protect) pin is used to prevent accidental writes to the device. When WP# is low, the entire memory array is write-protected.
The M25P20-VMN6 uses a page-based erase architecture, where each page is 256 bytes. The device can erase a single page or multiple pages in a single operation.
The typical programming time for the M25P20-VMN6 is 5 ms for a single byte write, and 20 ms for a 256-byte page write.