Part Details for M12L2561616A-6TG2T by Elite Semiconductor Memory Technology Inc
Results Overview of M12L2561616A-6TG2T by Elite Semiconductor Memory Technology Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
M12L2561616A-6TG2T Information
M12L2561616A-6TG2T by Elite Semiconductor Memory Technology Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for M12L2561616A-6TG2T
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
M12L2561616A-6TG2T
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Maritex | SDRAM Memory M12L2561616A-6TG2T, 4Mx16bitx4, 166MHz, TSOP II 54pin, 400milx875mil, ESMT Min Qty: 1 Package Multiple: 1 | 5 |
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$2.6050 | Buy Now |
Part Details for M12L2561616A-6TG2T
M12L2561616A-6TG2T CAD Models
M12L2561616A-6TG2T Part Data Attributes
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M12L2561616A-6TG2T
Elite Semiconductor Memory Technology Inc
Buy Now
Datasheet
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M12L2561616A-6TG2T
Elite Semiconductor Memory Technology Inc
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, TSOP2-54
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | |
| Package Description | TSOP2-54 | |
| Reach Compliance Code | unknown | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| Length | 22.22 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 16MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.004 A | |
| Supply Current-Max | 0.08 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for M12L2561616A-6TG2T
This table gives cross-reference parts and alternative options found for M12L2561616A-6TG2T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M12L2561616A-6TG2T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| K4S561632A-TC750 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | M12L2561616A-6TG2T vs K4S561632A-TC750 |
| MT48LC16M16A1TG-75 | Micron Technology Inc | Check for Price | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | M12L2561616A-6TG2T vs MT48LC16M16A1TG-75 |
| HY57V561620FLT-6I | SK Hynix Inc | Check for Price | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | M12L2561616A-6TG2T vs HY57V561620FLT-6I |
| HY57V561620ALT-6 | SK Hynix Inc | Check for Price | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | M12L2561616A-6TG2T vs HY57V561620ALT-6 |
| V54C3256164VDUI6I | ProMOS Technologies Inc | Check for Price | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 | M12L2561616A-6TG2T vs V54C3256164VDUI6I |
| HYI39SC256160FE-6 | Qimonda AG | Check for Price | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, TSOP2-54 | M12L2561616A-6TG2T vs HYI39SC256160FE-6 |
| HYB39S256160CE-7.5 | Infineon Technologies AG | Check for Price | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 | M12L2561616A-6TG2T vs HYB39S256160CE-7.5 |
| K4S561632N-LL75 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54 | M12L2561616A-6TG2T vs K4S561632N-LL75 |
M12L2561616A-6TG2T Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the M12L2561616A-6TG2T is 0°C to 70°C, with an extended temperature range of -40°C to 85°C available for industrial-grade applications.
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The M12L2561616A-6TG2T requires a refresh cycle every 64ms (tREF) to maintain data integrity. You can use a self-refresh mode or an auto-refresh mode, depending on your system requirements.
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The M12L2561616A-6TG2T supports a maximum clock frequency of 166MHz, with a corresponding data transfer rate of 1333Mbps.
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The M12L2561616A-6TG2T has two power-down modes: Suspend (CKE low) and Power-Down (CKE high). You can use these modes to reduce power consumption when the SDRAM is not in use.
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The M12L2561616A-6TG2T has a latency of 6 clock cycles (CL6) for read and write operations.