Part Details for LBSS123LT1G by LRC Leshan Radio Co Ltd
Results Overview of LBSS123LT1G by LRC Leshan Radio Co Ltd
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Security and Surveillance
Space Technology
Internet of Things (IoT)
Environmental Monitoring
Smart Cities
Aerospace and Defense
Healthcare
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Robotics and Drones
LBSS123LT1G Information
LBSS123LT1G by LRC Leshan Radio Co Ltd is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for LBSS123LT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.17A I(D), 100V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 2119 |
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$0.0396 / $0.0880 | Buy Now |
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DISTI #
LBSS123LT1G
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Avnet Asia | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R (Alt: LBSS123LT1G) RoHS: Compliant Min Qty: 30000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days | 36000 |
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RFQ | |
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Win Source Electronics | N-CHANNEL POWER MOSFET | 360000 |
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$0.0134 / $0.0172 | Buy Now |
Part Details for LBSS123LT1G
LBSS123LT1G CAD Models
LBSS123LT1G Part Data Attributes
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LBSS123LT1G
LRC Leshan Radio Co Ltd
Buy Now
Datasheet
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Compare Parts:
LBSS123LT1G
LRC Leshan Radio Co Ltd
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LESHAN RADIO CO LTD | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 0.17 A | |
| Drain-source On Resistance-Max | 6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.225 W | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for LBSS123LT1G
This table gives cross-reference parts and alternative options found for LBSS123LT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of LBSS123LT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| VN10LP | Diodes Incorporated | $0.4730 | Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 | LBSS123LT1G vs VN10LP |
| ND2012L | Temic Semiconductors | Check for Price | Small Signal Field-Effect Transistor, 0.16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, | LBSS123LT1G vs ND2012L |
| 2N3070 | Solitron Devices Inc | Check for Price | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18, | LBSS123LT1G vs 2N3070 |
| 2SK68A | NEC Electronics America Inc | Check for Price | Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-92, | LBSS123LT1G vs 2SK68A |
| VP3203N3-GP003 | Microchip Technology Inc | Check for Price | SMALL SIGNAL, FET | LBSS123LT1G vs VP3203N3-GP003 |
| BSS670S2LL6327 | Infineon Technologies AG | Check for Price | Small Signal Field-Effect Transistor, 0.54A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3 | LBSS123LT1G vs BSS670S2LL6327 |
| 2SK94-T1BX2 | NEC Electronics America Inc | Check for Price | Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, PLASTIC, SC-59, 3 PIN | LBSS123LT1G vs 2SK94-T1BX2 |
| 2N7002L | Motorola Mobility LLC | Check for Price | 115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | LBSS123LT1G vs 2N7002L |
| ZVN4310A | Zetex / Diodes Inc | Check for Price | Small Signal Field-Effect Transistor, 0.9A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 | LBSS123LT1G vs ZVN4310A |
| 2N7008P003 | Supertex Inc | Check for Price | Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN | LBSS123LT1G vs 2N7008P003 |
LBSS123LT1G Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the LBSS123LT1G is -40°C to 85°C.
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The LBSS123LT1G module supports multiple frequency bands, including GSM, GPRS, and LTE. To configure the module for a specific frequency band, refer to the AT command set provided in the datasheet or contact LRC Leshan Radio Co Ltd for customized configuration.
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The maximum transmit power of the LBSS123LT1G is 23 dBm for GSM and 21 dBm for LTE.
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Yes, the LBSS123LT1G module supports SMS and USSD. It can send and receive SMS messages and also supports USSD commands for interactive services.
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The power consumption of the LBSS123LT1G in idle mode is typically around 1.5 mA.