Part Details for LBC846BLT1G by LRC Leshan Radio Co Ltd
Results Overview of LBC846BLT1G by LRC Leshan Radio Co Ltd
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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LBC846BLT1G Information
LBC846BLT1G by LRC Leshan Radio Co Ltd is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for LBC846BLT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
LBC846BLT1G
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Avnet Asia | Trans GP BJT NPN 65V 0.1A 3-Pin SOT-23 T/R (Alt: LBC846BLT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days | 15000 |
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RFQ |
Part Details for LBC846BLT1G
LBC846BLT1G CAD Models
LBC846BLT1G Part Data Attributes
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LBC846BLT1G
LRC Leshan Radio Co Ltd
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Datasheet
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LBC846BLT1G
LRC Leshan Radio Co Ltd
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LESHAN RADIO CO LTD | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Emitter Voltage-Max | 65 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 200 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.225 W | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 100 MHz |
Alternate Parts for LBC846BLT1G
This table gives cross-reference parts and alternative options found for LBC846BLT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of LBC846BLT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BC846BRFG | Taiwan Semiconductor | Check for Price | Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3 | LBC846BLT1G vs BC846BRFG |
| BC846BTBK | Central Semiconductor Corp | Check for Price | Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, ULTRAMINI-3 | LBC846BLT1G vs BC846BTBK |
| 934062889115 | Nexperia | Check for Price | Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon | LBC846BLT1G vs 934062889115 |
| BC846BTTR | Central Semiconductor Corp | Check for Price | Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, ULTRAMINI-3 | LBC846BLT1G vs BC846BTTR |
| 934069701135 | Nexperia | Check for Price | Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon | LBC846BLT1G vs 934069701135 |
| 934062218115 | Nexperia | Check for Price | Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon | LBC846BLT1G vs 934062218115 |
| BC846B-T | Rectron Semiconductor | Check for Price | Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, SMD, 3 PIN | LBC846BLT1G vs BC846B-T |
| JC546BAMO | NXP Semiconductors | Check for Price | TRANSISTOR 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SPT, SC-43, 3 PIN, BIP General Purpose Small Signal | LBC846BLT1G vs JC546BAMO |
| 933237780112 | NXP Semiconductors | Check for Price | TRANSISTOR 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SPT, SC-43, 3 PIN, BIP General Purpose Small Signal | LBC846BLT1G vs 933237780112 |
| 934062963215 | Nexperia | Check for Price | Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB | LBC846BLT1G vs 934062963215 |
LBC846BLT1G Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the LBC846BLT1G is -55°C to 150°C.
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Yes, the LBC846BLT1G is suitable for high-frequency applications up to 5 GHz due to its high transition frequency (fT) of 6 GHz.
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The recommended storage temperature range for the LBC846BLT1G is -40°C to 100°C.
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Yes, the LBC846BLT1G transistor is lead-free and compliant with the European Union's Restriction of Hazardous Substances (RoHS) directive.
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The typical saturation voltage (VCE(sat)) for the LBC846BLT1G is 0.2 V at IC = 500 mA and IB = 50 mA.