Part Details for L2N7002LT1G by LRC Leshan Radio Co Ltd
Results Overview of L2N7002LT1G by LRC Leshan Radio Co Ltd
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
L2N7002LT1G Information
L2N7002LT1G by LRC Leshan Radio Co Ltd is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for L2N7002LT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 27694 |
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RFQ | ||
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Bristol Electronics | 6539 |
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RFQ | ||
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.115A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB | 22155 |
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$0.0750 / $0.5000 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.115A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB | 5231 |
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$0.0600 / $0.2000 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.115A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB | 4063 |
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$0.0650 / $0.2000 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.115A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB | 1600 |
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$0.1500 / $0.5000 | Buy Now |
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DISTI #
L2N7002LT1G
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Avnet Asia | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R (Alt: L2N7002LT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days | 0 |
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RFQ | |
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Win Source Electronics | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R / Small Signal MOSFET 115 mAmps, 60 Volts | 59593 |
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$0.0115 / $0.0171 | Buy Now |
Part Details for L2N7002LT1G
L2N7002LT1G CAD Models
L2N7002LT1G Part Data Attributes
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L2N7002LT1G
LRC Leshan Radio Co Ltd
Buy Now
Datasheet
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Compare Parts:
L2N7002LT1G
LRC Leshan Radio Co Ltd
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, 318, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LESHAN RADIO CO LTD | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, 318, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.115 A | |
| Drain-source On Resistance-Max | 7.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.3 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
Alternate Parts for L2N7002LT1G
This table gives cross-reference parts and alternative options found for L2N7002LT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of L2N7002LT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N7002TT2T1 | Vishay Siliconix | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | L2N7002LT1G vs 2N7002TT2T1 |
| 2N7002LLG-AE2-R | Unisonic Technologies Co Ltd | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE PACKAGE-3 | L2N7002LT1G vs 2N7002LLG-AE2-R |
| 2N7002C1B-JQRS.DA | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, 3 PIN | L2N7002LT1G vs 2N7002C1B-JQRS.DA |
| 2N7002C1B-JQRS.CVB | TT Electronics Resistors | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, 3 PIN | L2N7002LT1G vs 2N7002C1B-JQRS.CVB |
| 2N7002C1B-JQRS.XRAY | TT Electronics Resistors | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, 3 PIN | L2N7002LT1G vs 2N7002C1B-JQRS.XRAY |
| 2N7002C1B-JQRS.GRPC | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, 3 PIN | L2N7002LT1G vs 2N7002C1B-JQRS.GRPC |
| 2N7002C1B-JQRS.GRPB | TT Electronics Resistors | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, 3 PIN | L2N7002LT1G vs 2N7002C1B-JQRS.GRPB |
| 2N7002C1B-JQRS.GRPC | TT Electronics Resistors | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, 3 PIN | L2N7002LT1G vs 2N7002C1B-JQRS.GRPC |
| 2N7000ZL-T92-B | Unisonic Technologies Co Ltd | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, LEAD FREE PACKAGE-3 | L2N7002LT1G vs 2N7000ZL-T92-B |
| 2N7002C1B-JQRS.SS | TT Electronics Resistors | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, 3 PIN | L2N7002LT1G vs 2N7002C1B-JQRS.SS |
L2N7002LT1G Frequently Asked Questions (FAQ)
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The recommended operating temperature range for L2N7002LT1G is -40°C to 85°C.
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To ensure the stability of the output voltage, it is recommended to use a capacitor with a value of 10uF or higher at the output pin, and to keep the input voltage within the specified range.
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The maximum input voltage that L2N7002LT1G can handle is 35V.
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Yes, L2N7002LT1G is suitable for high-reliability applications, but it is recommended to follow the recommended operating conditions and to perform thorough testing and validation to ensure the device meets the specific requirements of the application.
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To troubleshoot issues with L2N7002LT1G, check the input voltage, output voltage, and current consumption. Verify that the device is operated within the recommended operating conditions and that the PCB layout is correct. If the issue persists, contact the manufacturer or a qualified engineer for further assistance.