Part Details for L2N7002KDW1T1G by LRC Leshan Radio Co Ltd
Results Overview of L2N7002KDW1T1G by LRC Leshan Radio Co Ltd
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
L2N7002KDW1T1G Information
L2N7002KDW1T1G by LRC Leshan Radio Co Ltd is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for L2N7002KDW1T1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.32A I(D), 60V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 2492 |
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$0.0324 / $0.0720 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Compliant |
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RFQ | |
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DISTI #
L2N7002KDW1T1G
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Avnet Asia | Trans MOSFET Array Dual N-CH 60V 0.32A 6-Pin SOT-363 T/R (Alt: L2N7002KDW1T1G) RoHS: Compliant Min Qty: 30000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days | 0 |
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RFQ |
Part Details for L2N7002KDW1T1G
L2N7002KDW1T1G CAD Models
L2N7002KDW1T1G Part Data Attributes
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L2N7002KDW1T1G
LRC Leshan Radio Co Ltd
Buy Now
Datasheet
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L2N7002KDW1T1G
LRC Leshan Radio Co Ltd
Small Signal Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LESHAN RADIO CO LTD | |
| Package Description | SC-88, 6 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.32 A | |
| Drain-source On Resistance-Max | 2.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
L2N7002KDW1T1G Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the L2N7002KDW1T1G is -40°C to 125°C.
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To ensure reliability in high-temperature applications, it is recommended to derate the power dissipation of the L2N7002KDW1T1G according to the temperature derating curve provided in the datasheet.
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The maximum allowable voltage for the L2N7002KDW1T1G is 700V.
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The L2N7002KDW1T1G should be stored in a dry, cool place away from direct sunlight and moisture. During shipping, the device should be protected from mechanical stress and electrostatic discharge.
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The recommended soldering temperature for the L2N7002KDW1T1G is 260°C, and the recommended soldering time is 10 seconds.