Part Details for KSH122TM by onsemi
Results Overview of KSH122TM by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
KSH122TM Information
KSH122TM by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for KSH122TM
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
KSH122TM
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Avnet Silica | Trans Darlington NPN 100V 8A 3Pin2Tab DPAK TR (Alt: KSH122TM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
KSH122TM
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EBV Elektronik | Trans Darlington NPN 100V 8A 3Pin2Tab DPAK TR (Alt: KSH122TM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for KSH122TM
KSH122TM CAD Models
KSH122TM Part Data Attributes
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KSH122TM
onsemi
Buy Now
Datasheet
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KSH122TM
onsemi
NPN Silicon Darlington Transistor, DPAK-3, 2500-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DPAK-3 | |
| Package Description | DPAK-3/2 | |
| Manufacturer Package Code | 369AK | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Emitter Voltage-Max | 100 V | |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| DC Current Gain-Min (hFE) | 100 | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 20 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for KSH122TM
This table gives cross-reference parts and alternative options found for KSH122TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KSH122TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MJD122T4G | onsemi | $0.4558 | 8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL | KSH122TM vs MJD122T4G |
| MJD122 | Micro Commercial Components | Check for Price | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, PLASTIC, DPACK-3 | KSH122TM vs MJD122 |
| CJD122 | Central Semiconductor Corp | Check for Price | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 | KSH122TM vs CJD122 |
| CJD122TR13 | Central Semiconductor Corp | Check for Price | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, | KSH122TM vs CJD122TR13 |
| MJD122 | Jiangsu Changjiang Electronics Technology Co Ltd | Check for Price | Power Bipolar Transistor | KSH122TM vs MJD122 |
| MJD122TF | onsemi | Check for Price | 8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK-3, 2000-REEL | KSH122TM vs MJD122TF |
| MJD122TF | Rochester Electronics LLC | Check for Price | 8A, 100V, NPN, Si, POWER TRANSISTOR, TO-252, DPAK-3 | KSH122TM vs MJD122TF |
| MJD122T4 | onsemi | Check for Price | 8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL | KSH122TM vs MJD122T4 |
KSH122TM Frequently Asked Questions (FAQ)
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A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
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Ensure that the device operates within the recommended junction temperature (Tj) range of -40°C to 150°C. Implement a thermal management system to keep the device temperature below 125°C.
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The maximum allowed voltage on the gate of KSH122TM is ±20V. Exceeding this voltage may damage the device.
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Yes, KSH122TM can be used in switching applications. However, ensure that the switching frequency is within the recommended range, and the device is properly driven to minimize switching losses.
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Handle the device with an ESD wrist strap or mat, and ensure that the PCB has ESD protection circuits. Use a voltage limiter or a TVS diode to protect the device from voltage surges.