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NPN Silicon Darlington Transistor, DPAK-3, 2000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
KSH122TF by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
KSH122TF
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Avnet Silica | Trans Darlington NPN 100V 8A 3Pin2Tab DPAK TR (Alt: KSH122TF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
KSH122TF
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EBV Elektronik | Trans Darlington NPN 100V 8A 3Pin2Tab DPAK TR (Alt: KSH122TF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock | 8000 |
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RFQ |
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KSH122TF
onsemi
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Datasheet
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KSH122TF
onsemi
NPN Silicon Darlington Transistor, DPAK-3, 2000-REEL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DPAK-3 | |
Package Description | DPAK-3/2 | |
Manufacturer Package Code | 369AK | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Collector Current-Max (IC) | 8 A | |
Collector-Emitter Voltage-Max | 100 V | |
Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
DC Current Gain-Min (hFE) | 100 | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 20 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for KSH122TF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KSH122TF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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MJD122 | Micro Commercial Components | Check for Price | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, PLASTIC, DPACK-3 | KSH122TF vs MJD122 |
MJD122T4G | onsemi | $0.4558 | 8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL | KSH122TF vs MJD122T4G |
CJD122 | Central Semiconductor Corp | Check for Price | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 | KSH122TF vs CJD122 |
CJD122TR13 | Central Semiconductor Corp | Check for Price | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, | KSH122TF vs CJD122TR13 |
MJD122 | Jiangsu Changjiang Electronics Technology Co Ltd | Check for Price | Power Bipolar Transistor | KSH122TF vs MJD122 |
MJD122TF | onsemi | Check for Price | 8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK-3, 2000-REEL | KSH122TF vs MJD122TF |
MJD122TF | Rochester Electronics LLC | Check for Price | 8A, 100V, NPN, Si, POWER TRANSISTOR, TO-252, DPAK-3 | KSH122TF vs MJD122TF |
MJD122T4 | onsemi | Check for Price | 8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL | KSH122TF vs MJD122T4 |
A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device to dissipate heat efficiently.
Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Ensure the device is operated within the recommended junction temperature (Tj) range of -40°C to 150°C.
Handle the device with an anti-static wrist strap or mat. Ensure the PCB is designed with ESD protection in mind, including TVS diodes and resistors. Follow standard ESD handling procedures to prevent damage.
Yes, the KSH122TF is AEC-Q101 qualified and suitable for automotive and high-reliability applications. However, ensure you follow the recommended operating conditions, and consult with onsemi's application engineers for specific guidance.
Follow the recommended soldering profile: peak temperature 260°C, time above 217°C 60-90 seconds. For rework, use a low-temperature soldering iron (< 350°C) and a solder with a melting point below 217°C.