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PNP Epitaxial Silicon Transistor, TO-126-3, 2000-BLKBG
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
KSB1151YS by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
34C1037
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Newark | Pnp/60V/5A Rohs Compliant: Yes |Onsemi KSB1151YS RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.3230 / $0.4120 | Buy Now |
DISTI #
KSB1151YSFS-ND
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DigiKey | TRANS PNP 60V 5A TO-126-3 Min Qty: 1 Lead time: 10 Weeks Container: Bulk |
448 In Stock |
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$0.5698 / $1.3700 | Buy Now |
DISTI #
KSB1151YS
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Avnet Americas | Trans GP BJT PNP 60V 5A 3-Pin(3+Tab) TO-126 Bulk - Bulk (Alt: KSB1151YS) RoHS: Compliant Min Qty: 4000 Package Multiple: 2000 Lead time: 111 Weeks, 0 Days Container: Bulk | 0 |
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RFQ | |
DISTI #
KSB1151YS
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Avnet Americas | Trans GP BJT PNP 60V 5A 3-Pin(3+Tab) TO-126 Bulk - Bulk (Alt: KSB1151YS) RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Bulk | 0 |
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$0.2982 / $0.3044 | Buy Now |
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Rochester Electronics | Power Bipolar Transistor, 5A, 60V, PNP, TO-126, Plastic/Epoxy, 3 Pin RoHS: Compliant Status: Active Min Qty: 1 | 1370 |
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$0.2602 / $0.4197 | Buy Now |
DISTI #
KSB1151YS
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TME | Transistor: PNP, bipolar, 60V, 5A, 1.3W, TO126ISO Min Qty: 1 | 0 |
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$0.3700 / $0.7030 | RFQ |
DISTI #
SMC-KSB1151YS
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 11391 |
|
RFQ | |
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Flip Electronics | Stock, ship today | 6000 |
|
RFQ |
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KSB1151YS
onsemi
Buy Now
Datasheet
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KSB1151YS
onsemi
PNP Epitaxial Silicon Transistor, TO-126-3, 2000-BLKBG
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-126-3 | |
Manufacturer Package Code | 340AS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 2 Days | |
Samacsys Manufacturer | onsemi | |
Collector Current-Max (IC) | 5 A | |
Collector-Emitter Voltage-Max | 60 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 200 | |
JEDEC-95 Code | TO-126 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | PNP | |
Power Dissipation-Max (Abs) | 20 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for KSB1151YS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KSB1151YS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
KSB1151YSTU | onsemi | $0.5331 | PNP Epitaxial Silicon Transistor, TO-126-3, 1920-TUBE | KSB1151YS vs KSB1151YSTU |
A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern around the device.
Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature and adjust the system design accordingly.
Monitor the device's current, voltage, and temperature. Implement overcurrent protection (OCP), overvoltage protection (OVP), and thermal shutdown (TSD) mechanisms to prevent damage.
Use a low-dropout linear regulator (LDO) or a switching regulator with a low minimum input voltage. Ensure the input capacitor is sufficient to handle the device's current requirements.
Use a shielded enclosure, and ensure proper PCB layout and grounding techniques. Implement EMI filters and shielding on the input and output lines. Follow the onsemi application note for EMI reduction.