Part Details for K9F5608U0D-PIB0 by Samsung Semiconductor
Results Overview of K9F5608U0D-PIB0 by Samsung Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
K9F5608U0D-PIB0 Information
K9F5608U0D-PIB0 by Samsung Semiconductor is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for K9F5608U0D-PIB0
Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Memory ICs | 618 |
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RFQ |
Part Details for K9F5608U0D-PIB0
K9F5608U0D-PIB0 CAD Models
K9F5608U0D-PIB0 Part Data Attributes
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K9F5608U0D-PIB0
Samsung Semiconductor
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Datasheet
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K9F5608U0D-PIB0
Samsung Semiconductor
Flash, 32MX8, 30ns, PDSO48
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.51 | |
Access Time-Max | 30 ns | |
Command User Interface | YES | |
Data Polling | NO | |
JESD-30 Code | R-PDSO-G48 | |
JESD-609 Code | e3 | |
Memory Density | 268435456 bit | |
Memory IC Type | FLASH | |
Memory Width | 8 | |
Moisture Sensitivity Level | 1 | |
Number of Sectors/Size | 2K | |
Number of Terminals | 48 | |
Number of Words | 33554432 words | |
Number of Words Code | 32000000 | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 32MX8 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSSOP | |
Package Equivalence Code | TSSOP48,.8,20 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
Page Size | 512 words | |
Parallel/Serial | PARALLEL | |
Qualification Status | Not Qualified | |
Ready/Busy | YES | |
Sector Size | 16K | |
Standby Current-Max | 0.00005 A | |
Supply Current-Max | 0.025 mA | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.5 mm | |
Terminal Position | DUAL | |
Toggle Bit | NO |
Alternate Parts for K9F5608U0D-PIB0
This table gives cross-reference parts and alternative options found for K9F5608U0D-PIB0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K9F5608U0D-PIB0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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NAND256W3A0AV6T | Numonyx Memory Solutions | Check for Price | Flash, 32MX8, 35ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48 | K9F5608U0D-PIB0 vs NAND256W3A0AV6T |
NAND256R3A2BV1F | STMicroelectronics | Check for Price | 32MX8 FLASH 1.8V PROM, 35ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC, USOP-48 | K9F5608U0D-PIB0 vs NAND256R3A2BV1F |
NAND256W3A0AN6E | STMicroelectronics | Check for Price | 32MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | K9F5608U0D-PIB0 vs NAND256W3A0AN6E |
NAND256W3A2AN6 | Numonyx Memory Solutions | Check for Price | Flash, 32MX8, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | K9F5608U0D-PIB0 vs NAND256W3A2AN6 |
HY27SS08561A-TPCS | SK Hynix Inc | Check for Price | Flash, 32MX8, 35ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48 | K9F5608U0D-PIB0 vs HY27SS08561A-TPCS |
NAND256R3A2AN6E | STMicroelectronics | Check for Price | 32MX8 FLASH 1.8V PROM, 12000ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | K9F5608U0D-PIB0 vs NAND256R3A2AN6E |
NAND256R3A3CN6F | STMicroelectronics | Check for Price | 32MX8 FLASH 1.8V PROM, 15000ns, PDSO48, 12 X 20 MM, TSOP-48 | K9F5608U0D-PIB0 vs NAND256R3A3CN6F |
NAND256W3A0CV1 | Numonyx Memory Solutions | Check for Price | Flash, 32MX8, 35ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48 | K9F5608U0D-PIB0 vs NAND256W3A0CV1 |
NAND256W3A2BV1 | STMicroelectronics | Check for Price | 32MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48 | K9F5608U0D-PIB0 vs NAND256W3A2BV1 |
NAND256W3AABN6E | Micron Technology Inc | Check for Price | Flash, 32MX8, 35ns, PDSO48, TSOP-48 | K9F5608U0D-PIB0 vs NAND256W3AABN6E |
K9F5608U0D-PIB0 Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the K9F5608U0D-PIB0 is -40°C to 85°C, as specified in the datasheet. However, it's essential to note that the device can operate at a wider temperature range, but with reduced performance and reliability.
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The power-up sequence for the K9F5608U0D-PIB0 is critical to ensure proper operation. It's recommended to power up the VCCQ (core voltage) before the VCCD (I/O voltage), and to ensure that the VCCQ is stable before applying clock signals or input data.
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The maximum clock frequency supported by the K9F5608U0D-PIB0 is 166 MHz, as specified in the datasheet. However, the actual clock frequency may be limited by the system design, PCB layout, and signal integrity considerations.
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The K9F5608U0D-PIB0's DDR interface requires proper termination to ensure signal integrity. It's recommended to use a 50-ohm termination resistor on the clock lines and a 33-ohm termination resistor on the data lines, as specified in the datasheet and application notes.
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The recommended layout and routing strategy for the K9F5608U0D-PIB0's BGA package involves using a symmetrical layout, minimizing signal trace lengths, and using a solid ground plane to reduce noise and improve signal integrity. It's also essential to follow the datasheet and application notes for specific guidelines on via placement, signal routing, and decoupling capacitor placement.