Part Details for JS28F160C3BD70 by Intel Corporation
Results Overview of JS28F160C3BD70 by Intel Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
JS28F160C3BD70 Information
JS28F160C3BD70 by Intel Corporation is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for JS28F160C3BD70
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | IC,EEPROM,NOR FLASH,1MX16,CMOS,TSSOP,48PIN,PLASTIC | 10 |
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$56.5448 / $62.8276 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Compliant |
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RFQ |
Part Details for JS28F160C3BD70
JS28F160C3BD70 CAD Models
JS28F160C3BD70 Part Data Attributes
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JS28F160C3BD70
Intel Corporation
Buy Now
Datasheet
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Compare Parts:
JS28F160C3BD70
Intel Corporation
Flash, 1MX16, 70ns, PDSO48, 12 X 20 MM, LEAD FREE, TSOP-48
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTEL CORP | |
| Part Package Code | TSOP | |
| Package Description | 12 X 20 MM, LEAD FREE, TSOP-48 | |
| Pin Count | 48 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| Samacsys Manufacturer | Intel | |
| Access Time-Max | 70 ns | |
| Additional Feature | USER-SELECTABLE 3V OR 12V VPP | |
| Boot Block | BOTTOM | |
| Command User Interface | YES | |
| Common Flash Interface | YES | |
| Data Polling | NO | |
| JESD-30 Code | R-PDSO-G48 | |
| JESD-609 Code | e3 | |
| Length | 18.4 mm | |
| Memory Density | 16777216 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Sectors/Size | 8,31 | |
| Number of Terminals | 48 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 1MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP1 | |
| Package Equivalence Code | TSSOP48,.8,20 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Parallel/Serial | PARALLEL | |
| Programming Voltage | 3 V | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.2 mm | |
| Sector Size | 4K,32K | |
| Standby Current-Max | 0.000005 A | |
| Supply Current-Max | 0.055 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.5 mm | |
| Terminal Position | DUAL | |
| Toggle Bit | NO | |
| Type | NOR TYPE | |
| Width | 12 mm |
Alternate Parts for JS28F160C3BD70
This table gives cross-reference parts and alternative options found for JS28F160C3BD70. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JS28F160C3BD70, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MBM29DL161BE-70TR | FUJITSU Limited | Check for Price | Flash, 1MX16, 70ns, PDSO48, PLASTIC, REVERSE, TSOP1-48 | JS28F160C3BD70 vs MBM29DL161BE-70TR |
| M29W160ET70N3F | Numonyx Memory Solutions | Check for Price | Flash, 1MX16, 70ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | JS28F160C3BD70 vs M29W160ET70N3F |
| MBM29DL164BE-70TR | FUJITSU Semiconductor Limited | Check for Price | Flash, 1MX16, 70ns, PDSO48, PLASTIC, REVERSE, TSOP1-48 | JS28F160C3BD70 vs MBM29DL164BE-70TR |
| M28W160CT70N1E | STMicroelectronics | Check for Price | 1MX16 FLASH 3V PROM, 70ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 | JS28F160C3BD70 vs M28W160CT70N1E |
| M29W160ET70N3 | Numonyx Memory Solutions | Check for Price | Flash, 1MX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | JS28F160C3BD70 vs M29W160ET70N3 |
| MBM29DL164BE-70TN | FUJITSU Limited | Check for Price | Flash, 1MX16, 70ns, PDSO48, PLASTIC, TSOP1-48 | JS28F160C3BD70 vs MBM29DL164BE-70TN |
| M28W160CB70N6 | Micron Technology Inc | Check for Price | Flash, 1MX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | JS28F160C3BD70 vs M28W160CB70N6 |
| MX29LV161BTI-70R | Macronix International Co Ltd | Check for Price | Flash, 1MX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48 | JS28F160C3BD70 vs MX29LV161BTI-70R |
| MBM29DL162TE-70TR | FUJITSU Semiconductor Limited | Check for Price | Flash, 1MX16, 70ns, PDSO48, PLASTIC, REVERSE, TSOP1-48 | JS28F160C3BD70 vs MBM29DL162TE-70TR |
| MX29LV161BTC-70 | Macronix International Co Ltd | Check for Price | Flash, 1MX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48 | JS28F160C3BD70 vs MX29LV161BTC-70 |
JS28F160C3BD70 Frequently Asked Questions (FAQ)
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The recommended operating voltage range for JS28F160C3BD70 is 2.7V to 3.6V.
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During read operations, HOLD# should be driven high and OE# should be driven low to enable the output.
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The WP# signal is used to protect the entire memory array from write operations. When WP# is driven low, the device is write-protected.
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To perform a sector erase operation, send the sector erase command (0x20) followed by the address of the sector to be erased. Then, send the write enable (WREN) command (0x06) to execute the erase operation.
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The JS28F160C3BD70 has a minimum of 100,000 erase cycles per sector, with a maximum of 10,000 erase cycles per block.