Part Details for JANTXV2N7370 by Microchip Technology Inc
Results Overview of JANTXV2N7370 by Microchip Technology Inc
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
JANTXV2N7370 Information
JANTXV2N7370 by Microchip Technology Inc is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANTXV2N7370
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1086-16225-ND
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DigiKey | TRANS NPN DARL 100V 12A TO-254AA Lead time: 22 Weeks Container: Bulk | Temporarily Out of Stock |
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Buy Now | |
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DISTI #
JANTXV2N7370
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Microchip Technology Inc | Power BJT _ TO-254, Projected EOL: 2049-02-05 COO: Philippines ECCN: EAR99 Lead time: 22 Weeks, 0 Days |
0 Alternates Available |
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$2,588.7700 | Buy Now |
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Onlinecomponents.com | RoHS: Compliant | 0 |
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$2,312.8600 / $6,614.1600 | Buy Now |
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NAC | Power BJT RoHS: Compliant Min Qty: 50 Package Multiple: 1 Container: Tray | 0 |
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RFQ | |
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Master Electronics | RoHS: Compliant | 0 |
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$2,312.8600 / $6,614.1600 | Buy Now |
Part Details for JANTXV2N7370
JANTXV2N7370 CAD Models
JANTXV2N7370 Part Data Attributes
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JANTXV2N7370
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
JANTXV2N7370
Microchip Technology Inc
Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, Metal, 3 Pin
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Package Description | TO-254, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 22 Weeks | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 12 A | |
| Collector-Emitter Voltage-Max | 100 V | |
| Configuration | DARLINGTON | |
| DC Current Gain-Min (hFE) | 150 | |
| JEDEC-95 Code | TO-254AA | |
| JESD-30 Code | S-MSFM-P3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | METAL | |
| Package Shape | SQUARE | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | NPN | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/624B | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for JANTXV2N7370
This table gives cross-reference parts and alternative options found for JANTXV2N7370. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N7370, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N7370 | Microchip Technology Inc | $334.6852 | Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, Metal, 3 Pin | JANTXV2N7370 vs 2N7370 |
| JAN2N7370 | Microchip Technology Inc | Check for Price | Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, Metal, 3 Pin | JANTXV2N7370 vs JAN2N7370 |
| JAN2N7370 | Microsemi Corporation | Check for Price | Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, Metal, 3 Pin, TO-254, 3 PIN | JANTXV2N7370 vs JAN2N7370 |
| JANTX2N7370 | Microchip Technology Inc | Check for Price | Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, Metal, 3 Pin | JANTXV2N7370 vs JANTX2N7370 |
| JANTXV2N7370 | Microsemi Corporation | Check for Price | Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, Metal, 3 Pin, TO-254, 3 PIN | JANTXV2N7370 vs JANTXV2N7370 |
JANTXV2N7370 Frequently Asked Questions (FAQ)
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Microchip recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended. Additionally, vias should be placed under the thermal pad to improve heat dissipation.
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To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and keeping the device within its specified operating temperature range.
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Microchip recommends soldering the JANTXV2N7370 using a peak reflow temperature of 260°C (500°F) for a maximum of 20 seconds. The soldering process should be done in a nitrogen atmosphere to prevent oxidation.
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To prevent electrostatic discharge (ESD) damage, it's essential to handle the JANTXV2N7370 with ESD-protective equipment, such as wrist straps, mats, and bags. Additionally, the device should be stored in a conductive container or bag when not in use.
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The JANTXV2N7370 is designed to be radiation-hardened, which means it can withstand certain levels of radiation exposure without significant performance degradation. However, the device's performance may still be affected by radiation, and engineers should consult the datasheet and radiation reports for specific details.