Part Details for JANTXV2N6847U by Infineon Technologies AG
Results Overview of JANTXV2N6847U by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JANTXV2N6847U Information
JANTXV2N6847U by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANTXV2N6847U
JANTXV2N6847U CAD Models
JANTXV2N6847U Part Data Attributes
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JANTXV2N6847U
Infineon Technologies AG
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Datasheet
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JANTXV2N6847U
Infineon Technologies AG
Power Field-Effect Transistor, 2.1A I(D), 200V, 1.725ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | CHIP CARRIER, R-CQCC-N15 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 180 mJ | |
| Case Connection | SOURCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 2.1 A | |
| Drain-source On Resistance-Max | 1.725 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-CQCC-N15 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 15 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 20 W | |
| Pulsed Drain Current-Max (IDM) | 8.4 A | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/563 | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | NO LEAD | |
| Terminal Position | QUAD | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for JANTXV2N6847U
This table gives cross-reference parts and alternative options found for JANTXV2N6847U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N6847U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFE9220E4 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 2.1A I(D), 200V, 1.725ohm, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | JANTXV2N6847U vs IRFE9220E4 |