Part Details for JANTXV2N6800U by Infineon Technologies AG
Results Overview of JANTXV2N6800U by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
JANTXV2N6800U Information
JANTXV2N6800U by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANTXV2N6800U
JANTXV2N6800U CAD Models
JANTXV2N6800U Part Data Attributes
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JANTXV2N6800U
Infineon Technologies AG
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Datasheet
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JANTXV2N6800U
Infineon Technologies AG
Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | HERMETIC SEALED, LCC-18 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 0.51 mJ | |
| Case Connection | SOURCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 1.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-CQCC-N15 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 15 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/557 | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | NO LEAD | |
| Terminal Position | QUAD | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for JANTXV2N6800U
This table gives cross-reference parts and alternative options found for JANTXV2N6800U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N6800U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| JANTX2N6800U | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | JANTXV2N6800U vs JANTX2N6800U |
| IRFE330-JQR-B | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | JANTXV2N6800U vs IRFE330-JQR-B |
| JAN2N6800U | International Rectifier | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | JANTXV2N6800U vs JAN2N6800U |
JANTXV2N6800U Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout for the JANTXV2N6800U in their application note AN2013-01. It suggests using a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently.
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The JANTXV2N6800U requires a specific biasing scheme to operate within its recommended operating conditions. Infineon recommends using a voltage regulator to provide a stable voltage supply, and ensuring that the gate-source voltage (Vgs) is within the recommended range of 2-5V.
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The JANTXV2N6800U is a high-reliability device that has undergone rigorous qualification tests, including those specified in the MIL-PRF-19500 standard. Infineon also provides a reliability report that details the device's performance under various stress conditions.
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Yes, the JANTXV2N6800U is designed to be radiation-hardened and can be used in applications that require resistance to total ionizing dose (TID) and single-event effects (SEE). However, it's essential to consult with Infineon's radiation experts to ensure the device meets the specific requirements of your application.
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Infineon recommends storing the JANTXV2N6800U in a dry, cool place, away from direct sunlight and moisture. The device should be handled with anti-static precautions, such as using an anti-static wrist strap or mat, to prevent damage from electrostatic discharge.