Part Details for JANTXV2N6798 by International Rectifier
Results Overview of JANTXV2N6798 by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
JANTXV2N6798 Information
JANTXV2N6798 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANTXV2N6798
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Bristol Electronics | Min Qty: 1 | 2 |
|
$21.6000 | Buy Now |
|
|
Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,5.5A I(D),TO-39 | 2 |
|
$99.1762 / $104.3960 | Buy Now |
|
|
Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,5.5A I(D),TO-39 | 1 |
|
$23.4000 | Buy Now |
Part Details for JANTXV2N6798
JANTXV2N6798 CAD Models
JANTXV2N6798 Part Data Attributes
|
|
JANTXV2N6798
International Rectifier
Buy Now
Datasheet
|
Compare Parts:
JANTXV2N6798
International Rectifier
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN
|
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | HERMETIC SEALED, TO-205AF, 3 PIN | |
| Reach Compliance Code | compliant | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 2 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 5.5 A | |
| Drain-source On Resistance-Max | 0.42 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/557 | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
JANTXV2N6798 Frequently Asked Questions (FAQ)
-
The recommended operating temperature range for JANTXV2N6798 is -55°C to 150°C.
-
To ensure reliability, follow the recommended derating guidelines, use a suitable heat sink, and ensure proper PCB layout and thermal management.
-
The maximum allowable power dissipation for JANTXV2N6798 is 150W, but this can be affected by the thermal environment and heat sink used.
-
Yes, JANTXV2N6798 can be used in switching applications, but ensure that the switching frequency is within the recommended range and that the device is properly snubbed to prevent voltage spikes.
-
Handle JANTXV2N6798 with ESD-protective equipment, use an ESD-protective wrist strap, and ensure that the device is stored in an ESD-protective package.