Part Details for JANTXV2N6788U by Microsemi Corporation
Results Overview of JANTXV2N6788U by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
JANTXV2N6788U Information
JANTXV2N6788U by Microsemi Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANTXV2N6788U
JANTXV2N6788U CAD Models
JANTXV2N6788U Part Data Attributes
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JANTXV2N6788U
Microsemi Corporation
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Datasheet
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JANTXV2N6788U
Microsemi Corporation
Power Field-Effect Transistor, 4.5A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18/15
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Package Description | CERAMIC, LCC-18/15 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Microsemi Corporation | |
| Additional Feature | HIGH RELIABILTY | |
| Case Connection | SOURCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 0.35 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-CQCC-N15 | |
| Number of Elements | 1 | |
| Number of Terminals | 15 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 20 W | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500 | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | QUAD | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for JANTXV2N6788U
This table gives cross-reference parts and alternative options found for JANTXV2N6788U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N6788U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| JANTX2N6788U | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18/15 | JANTXV2N6788U vs JANTX2N6788U |
| IRFE120-JQR-BE4 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC4-18 | JANTXV2N6788U vs IRFE120-JQR-BE4 |
| IRFE120-JQR-B | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 4.5A, 100V, 0.345ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, CERAMIC, LCC-18 | JANTXV2N6788U vs IRFE120-JQR-B |
| IRFE120 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 4.5A, 100V, 0.345ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, CERAMIC, LCC-18 | JANTXV2N6788U vs IRFE120 |
| IRFE120-JQR-B | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-18 | JANTXV2N6788U vs IRFE120-JQR-B |