Part Details for JANTXV2N6786 by Harris Semiconductor
Results Overview of JANTXV2N6786 by Harris Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Automotive
JANTXV2N6786 Information
JANTXV2N6786 by Harris Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANTXV2N6786
JANTXV2N6786 CAD Models
JANTXV2N6786 Part Data Attributes
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JANTXV2N6786
Harris Semiconductor
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Datasheet
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JANTXV2N6786
Harris Semiconductor
Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Package Description | CYLINDRICAL, O-MBCY-W3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | RADIATION HARDENED | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 1.25 A | |
| Drain-source On Resistance-Max | 3.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 15 pF | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 15 W | |
| Pulsed Drain Current-Max (IDM) | 5.5 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | MILITARY STANDARD (USA) | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 65 ns | |
| Turn-on Time-Max (ton) | 35 ns |
Alternate Parts for JANTXV2N6786
This table gives cross-reference parts and alternative options found for JANTXV2N6786. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N6786, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N6786E3 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor | JANTXV2N6786 vs 2N6786E3 |
| 2N6786 | Semiconductor Technology Inc | Check for Price | Power Field-Effect Transistor, 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | JANTXV2N6786 vs 2N6786 |
| IRFF313R | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 1.15A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | JANTXV2N6786 vs IRFF313R |
| IRFF312 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 1.15A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | JANTXV2N6786 vs IRFF312 |
| IRFF313 | International Rectifier | Check for Price | Power Field-Effect Transistor, 1.15A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | JANTXV2N6786 vs IRFF313 |
| IRFF311 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 1.35A I(D), 350V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205, | JANTXV2N6786 vs IRFF311 |
| IRFF313 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 1.15A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205, | JANTXV2N6786 vs IRFF313 |
| 2N6786PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | JANTXV2N6786 vs 2N6786PBF |
| IRFF313 | Intersil Corporation | Check for Price | 1.15A, 350V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | JANTXV2N6786 vs IRFF313 |
| IRFF311 | Intersil Corporation | Check for Price | 1.35A, 350V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | JANTXV2N6786 vs IRFF311 |