Part Details for JANTXV2N6784U by Defense Logistics Agency
Results Overview of JANTXV2N6784U by Defense Logistics Agency
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JANTXV2N6784U Information
JANTXV2N6784U by Defense Logistics Agency is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANTXV2N6784U
JANTXV2N6784U CAD Models
JANTXV2N6784U Part Data Attributes
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JANTXV2N6784U
Defense Logistics Agency
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JANTXV2N6784U
Defense Logistics Agency
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DEFENSE LOGISTICS AGENCY | |
| Package Description | HERMETIC SEALED, LCC-18 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 20 mJ | |
| Case Connection | SOURCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 2.25 A | |
| Drain-source On Resistance-Max | 1.725 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-CQCC-N15 | |
| Number of Elements | 1 | |
| Number of Terminals | 15 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 9 A | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/556 | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | QUAD | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for JANTXV2N6784U
This table gives cross-reference parts and alternative options found for JANTXV2N6784U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N6784U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N6784U | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 2.25A I(D), 200V, 2.81ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18 | JANTXV2N6784U vs 2N6784U |
| IRFE210 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 2.25A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | JANTXV2N6784U vs IRFE210 |
| IRFE210 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 1.8A, 200V, 1.725ohm, Si, POWER, MOSFET, LCC4-15 | JANTXV2N6784U vs IRFE210 |
| JANTX2N6784U | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 2.25A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | JANTXV2N6784U vs JANTX2N6784U |
| IRFE210 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 1.8A I(D), 200V, 1.725ohm, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | JANTXV2N6784U vs IRFE210 |
| IRFE210E4 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 1.8A I(D), 200V, 1.725ohm, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | JANTXV2N6784U vs IRFE210E4 |