Part Details for JANTXV2N6782U by Infineon Technologies AG
Results Overview of JANTXV2N6782U by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JANTXV2N6782U Information
JANTXV2N6782U by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANTXV2N6782U
JANTXV2N6782U CAD Models
JANTXV2N6782U Part Data Attributes
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JANTXV2N6782U
Infineon Technologies AG
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Datasheet
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JANTXV2N6782U
Infineon Technologies AG
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | HERMETIC SEALED, LCC-18 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 7 mJ | |
| Case Connection | SOURCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 3.5 A | |
| Drain-source On Resistance-Max | 0.69 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-CQCC-N15 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 15 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 15 W | |
| Pulsed Drain Current-Max (IDM) | 14 A | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/556 | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | NO LEAD | |
| Terminal Position | QUAD | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for JANTXV2N6782U
This table gives cross-reference parts and alternative options found for JANTXV2N6782U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N6782U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRFE110-JQR-B | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 3.5A, 100V, 0.69ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC-18 | JANTXV2N6782U vs IRFE110-JQR-B |
| IRFE110 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | JANTXV2N6782U vs IRFE110 |
| 2N6782U | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18 | JANTXV2N6782U vs 2N6782U |
JANTXV2N6782U Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout in their application note AN2013-01, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
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The JANTXV2N6782U requires a specific biasing scheme to operate within its recommended operating conditions. Refer to the datasheet's application circuit and biasing section, and consult with Infineon's application engineers if necessary.
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The JANTXV2N6782U is a high-reliability device that has undergone rigorous qualification tests, including those specified in the MIL-PRF-19500 standard. Refer to the device's qualification report and reliability data sheet for more information.
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The JANTXV2N6782U is designed to meet the requirements of the JANTXV radiation-hardened standard, but it's essential to consult with Infineon's radiation experts to ensure the device meets the specific radiation requirements of your application.
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Follow the guidelines outlined in the datasheet and Infineon's packaging and storage application note (AN2013-02) to ensure the device is stored and handled properly to prevent damage and degradation.