Part Details for JANTXV2N6764 by Motorola Semiconductor Products
Results Overview of JANTXV2N6764 by Motorola Semiconductor Products
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JANTXV2N6764 Information
JANTXV2N6764 by Motorola Semiconductor Products is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANTXV2N6764
JANTXV2N6764 CAD Models
JANTXV2N6764 Part Data Attributes
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JANTXV2N6764
Motorola Semiconductor Products
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Datasheet
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JANTXV2N6764
Motorola Semiconductor Products
Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MOTOROLA INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 38 A | |
| Drain-source On Resistance-Max | 0.055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 500 pF | |
| JEDEC-95 Code | TO-204AE | |
| JESD-30 Code | O-MBFM-P2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 150 W | |
| Pulsed Drain Current-Max (IDM) | 70 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | MILITARY STANDARD (USA) | |
| Surface Mount | NO | |
| Terminal Finish | NOT SPECIFIED | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 225 ns | |
| Turn-on Time-Max (ton) | 135 ns |
Alternate Parts for JANTXV2N6764
This table gives cross-reference parts and alternative options found for JANTXV2N6764. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N6764, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| JANTXV2N6764 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN | JANTXV2N6764 vs JANTXV2N6764 |
| IRF153 | STMicroelectronics | Check for Price | 33A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | JANTXV2N6764 vs IRF153 |
| IRF151 | STMicroelectronics | Check for Price | 40A, 60V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | JANTXV2N6764 vs IRF151 |
| JANTXV2N6764 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN | JANTXV2N6764 vs JANTXV2N6764 |
| IRF150 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | JANTXV2N6764 vs IRF150 |
| IRF150R1 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | JANTXV2N6764 vs IRF150R1 |
| IRF151 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 33A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | JANTXV2N6764 vs IRF151 |
| JANTXV2N6764 | Omnirel Corp | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN | JANTXV2N6764 vs JANTXV2N6764 |
| IRF153 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 33A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | JANTXV2N6764 vs IRF153 |
| JANTX2N6764 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN | JANTXV2N6764 vs JANTX2N6764 |