Part Details for JANTXV2N6764 by Infineon Technologies AG
Results Overview of JANTXV2N6764 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JANTXV2N6764 Information
JANTXV2N6764 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANTXV2N6764
JANTXV2N6764 CAD Models
JANTXV2N6764 Part Data Attributes
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JANTXV2N6764
Infineon Technologies AG
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Datasheet
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JANTXV2N6764
Infineon Technologies AG
Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-204, 2 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 38 A | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204 | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 152 A | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/543 | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for JANTXV2N6764
This table gives cross-reference parts and alternative options found for JANTXV2N6764. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N6764, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| JANTXV2N6764 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN | JANTXV2N6764 vs JANTXV2N6764 |
| IRF153 | STMicroelectronics | Check for Price | 33A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | JANTXV2N6764 vs IRF153 |
| IRF151 | STMicroelectronics | Check for Price | 40A, 60V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | JANTXV2N6764 vs IRF151 |
| IRF150 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | JANTXV2N6764 vs IRF150 |
| IRF150R1 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | JANTXV2N6764 vs IRF150R1 |
| IRF151 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 33A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | JANTXV2N6764 vs IRF151 |
| JANTXV2N6764 | Omnirel Corp | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN | JANTXV2N6764 vs JANTXV2N6764 |
| IRF153 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 33A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | JANTXV2N6764 vs IRF153 |
| JANTX2N6764 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN | JANTXV2N6764 vs JANTX2N6764 |
| IRF152 | STMicroelectronics | Check for Price | 33A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | JANTXV2N6764 vs IRF152 |
JANTXV2N6764 Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout for the JANTXV2N6764 in their application note AN2013-01. It suggests using a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently.
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The JANTXV2N6764 requires a specific biasing scheme to operate within its recommended operating conditions. Infineon recommends using a voltage regulator to maintain a stable voltage supply, and ensuring that the input and output pins are properly terminated to prevent oscillations.
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The JANTXV2N6764 is a high-reliability device that meets the standards of the Aerospace and Defense industry. It is qualified to the MIL-PRF-19500 standard and is also compliant with the European Space Agency's (ESA) ESCC 22100/081 standard.
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Yes, the JANTXV2N6764 is designed to be radiation-hardened and can withstand total ionizing dose (TID) effects up to 100 krad(Si). However, it's essential to consult with Infineon's radiation experts to ensure the device meets the specific radiation requirements of your application.
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Infineon recommends storing the JANTXV2N6764 in a dry, cool place, away from direct sunlight and moisture. The device should be handled with anti-static precautions, such as using an anti-static wrist strap or mat, to prevent electrostatic discharge (ESD) damage.