Part Details for JANTXV2N6676T1 by Microsemi Corporation
Results Overview of JANTXV2N6676T1 by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JANTXV2N6676T1 Information
JANTXV2N6676T1 by Microsemi Corporation is an Other Transistor.
Other Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANTXV2N6676T1
JANTXV2N6676T1 CAD Models
JANTXV2N6676T1 Part Data Attributes
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JANTXV2N6676T1
Microsemi Corporation
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Datasheet
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JANTXV2N6676T1
Microsemi Corporation
Transistor
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 200 °C | |
| Polarity/Channel Type | NPN | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO |
JANTXV2N6676T1 Frequently Asked Questions (FAQ)
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Microsemi recommends following the guidelines in their application note AN-1071 for optimal PCB layout, including using a solid ground plane, minimizing lead lengths, and using bypass capacitors to reduce noise and improve stability.
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To ensure reliability in high-temperature applications, it's essential to follow the recommended operating conditions, use a suitable thermal management system, and consider derating the device's power dissipation according to the temperature derating curve provided in the datasheet.
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The JANTXV2N6676T1 is designed to meet the radiation hardness assurance (RHA) levels specified in MIL-PRF-38535, including total ionizing dose (TID) of 100 krad(Si), single event latchup (SEL) of 60 MeV-cm²/mg, and single event upset (SEU) of 60 MeV-cm²/mg.
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Yes, the JANTXV2N6676T1 can be used in non-radiation environments, but it's essential to follow the recommended operating conditions and ensure that the device is not exposed to conditions that exceed its absolute maximum ratings.
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The lead time and availability of JANTXV2N6676T1 may vary depending on the region, quantity, and other factors. It's recommended to check with authorized distributors or Microsemi's sales team for the most up-to-date information.