Part Details for JANTXV2N6301 by Microsemi Corporation
Results Overview of JANTXV2N6301 by Microsemi Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
JANTXV2N6301 Information
JANTXV2N6301 by Microsemi Corporation is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANTXV2N6301
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2N6301-JANTXV
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Richardson RFPD | RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT RoHS: Not Compliant Min Qty: 100 | 0 |
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$39.8000 / $40.8600 | Buy Now |
Part Details for JANTXV2N6301
JANTXV2N6301 CAD Models
JANTXV2N6301 Part Data Attributes
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JANTXV2N6301
Microsemi Corporation
Buy Now
Datasheet
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JANTXV2N6301
Microsemi Corporation
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, TO-66, 2 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | TO-66 | |
| Package Description | TO-66, 2 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Microsemi Corporation | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| DC Current Gain-Min (hFE) | 100 | |
| JEDEC-95 Code | TO-213AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | NPN | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL-19500/539 | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 4 MHz |
Alternate Parts for JANTXV2N6301
This table gives cross-reference parts and alternative options found for JANTXV2N6301. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N6301, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| JANTX2N6301 | Microchip Technology Inc | $39.4686 | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin | JANTXV2N6301 vs JANTX2N6301 |
| JAN2N6301 | Motorola Semiconductor Products | Check for Price | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin | JANTXV2N6301 vs JAN2N6301 |
| 2N6301 | Sensitron Semiconductors | Check for Price | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, Metal, 3 Pin, | JANTXV2N6301 vs 2N6301 |
| JAN2N6301 | Motorola Mobility LLC | Check for Price | 8A, 80V, NPN, Si, POWER TRANSISTOR | JANTXV2N6301 vs JAN2N6301 |
| 2N6301-JQR-AR1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 8A, 80V, NPN, Si, POWER TRANSISTOR, TO-213AA, TO-66, 2 PIN | JANTXV2N6301 vs 2N6301-JQR-AR1 |
| 2N6301 | Motorola Semiconductor Products | Check for Price | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin | JANTXV2N6301 vs 2N6301 |
| 2N6301.MODR1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 8A, 80V, NPN, Si, POWER TRANSISTOR, TO-213AA, TO-66, 2 PIN | JANTXV2N6301 vs 2N6301.MODR1 |
| JAN2N6301 | Microsemi Corporation | Check for Price | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, TO-66, 2 PIN | JANTXV2N6301 vs JAN2N6301 |
JANTXV2N6301 Frequently Asked Questions (FAQ)
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The JANTXV2N6301 is a radiation-hardened device, designed to withstand total ionizing dose (TID) up to 100 krad(Si) and single event effects (SEE) up to 37 MeV-cm²/mg.
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The JANTXV2N6301 operates over a temperature range of -55°C to 125°C, making it suitable for use in harsh environments.
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Yes, the JANTXV2N6301 is compliant with the QML-V (Qualified Manufacturers List-V) certification, which ensures that it meets the stringent requirements for reliability and performance in aerospace and defense applications.
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The JANTXV2N6301 comes in a hermetically sealed ceramic package, with a size of 2.50 mm x 1.30 mm x 0.90 mm.
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Yes, the JANTXV2N6301 is designed for use in high-reliability applications, such as aerospace, defense, and satellite systems, where failure is not an option.