Part Details for JANTXV2N5153U3/TR by Microchip Technology Inc
Results Overview of JANTXV2N5153U3/TR by Microchip Technology Inc
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JANTXV2N5153U3/TR Information
JANTXV2N5153U3/TR by Microchip Technology Inc is an Other Transistor.
Other Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANTXV2N5153U3/TR
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
33AJ5429
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Newark | 80V 2A 1W Pnp Low Profile Cer Power Bjt Smt Tr U3 Rohs Compliant: Yes |Microchip JANTXV2N5153U3/TR RoHS: Compliant Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$162.8800 / $169.3900 | Buy Now |
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DISTI #
150-JANTXV2N5153U3/TR-ND
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DigiKey | TRANS PNP 80V 2A U3 Min Qty: 100 Lead time: 22 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$169.3900 | Buy Now |
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DISTI #
JANTXV2N5153U3/TR
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Avnet Americas | PNP Silicon Low Power Transistor 80VDC 3-Pin U-3 Tray - Tape and Reel (Alt: JANTXV2N5153U3/TR) RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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$152.5440 / $162.8750 | Buy Now |
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DISTI #
494-JANTXV2N5153U3TR
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Mouser Electronics | Bipolar Transistors - BJT 80V 2A 1W PNP Low Profile CER Power BJT SMT TR RoHS: Not Compliant | 0 |
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$169.3900 | Order Now |
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DISTI #
JANTXV2N5153U3/TR
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Microchip Technology Inc | Power BJT _ U3, Projected EOL: 2049-02-05 COO: United States of America ECCN: EAR99 Lead time: 22 Weeks, 0 Days |
0 Alternates Available |
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$182.4200 | Buy Now |
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Onlinecomponents.com | RoHS: Compliant | 0 |
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$165.1500 / $484.7200 | Buy Now |
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NAC | Power BJT RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 0 |
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$158.9000 / $186.1400 | Buy Now |
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Master Electronics | RoHS: Compliant | 0 |
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$165.1500 / $484.7200 | Buy Now |
Part Details for JANTXV2N5153U3/TR
JANTXV2N5153U3/TR CAD Models
JANTXV2N5153U3/TR Part Data Attributes
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JANTXV2N5153U3/TR
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
JANTXV2N5153U3/TR
Microchip Technology Inc
Transistor
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Factory Lead Time | 22 Weeks | |
| Samacsys Manufacturer | Microchip |
JANTXV2N5153U3/TR Frequently Asked Questions (FAQ)
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Microchip recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane to reduce thermal resistance.
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To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design and layout guidelines. Additionally, consider using thermal interface materials (TIMs) to improve heat transfer between the device and the heat sink. It's also crucial to monitor the device's junction temperature and adjust the operating conditions accordingly.
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Microchip recommends following the JEDEC J-STD-020D.1 standard for soldering conditions. The recommended peak reflow temperature is 260°C, with a maximum time above 255°C of 30 seconds. It's essential to use a soldering profile that minimizes thermal stress on the device.
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To prevent ESD damage, it's essential to follow proper handling and assembly procedures. Use ESD-protective packaging, wrist straps, and mats during handling and assembly. Ensure that the device is properly grounded during assembly, and avoid touching the device's pins or exposed internal components.
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The JANTXV2N5153U3/TR is designed to meet the requirements of MIL-PRF-38535, which includes radiation hardness. The device is guaranteed to withstand total ionizing dose (TID) effects up to 100 krad(Si) and single-event effects (SEEs) up to 80 MeV-cm²/mg. However, it's essential to consult the datasheet and radiation report for specific details on radiation hardness and its implications on device performance.