Part Details for JANTXV2N3019S by onsemi
Results Overview of JANTXV2N3019S by onsemi
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JANTXV2N3019S Information
JANTXV2N3019S by onsemi is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANTXV2N3019S
JANTXV2N3019S CAD Models
JANTXV2N3019S Part Data Attributes
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JANTXV2N3019S
onsemi
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Datasheet
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JANTXV2N3019S
onsemi
MIL-PRF-19500/391: 80 V, 1 A NPN Small Signal Transistor, TO-39 3-Lead, 100-BLKBX, Military Qualified
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-39 | |
Package Description | CASE 205AB-01, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | 205AB | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 1 A | |
Collector-Emitter Voltage-Max | 80 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 15 | |
JEDEC-95 Code | TO-39 | |
JESD-30 Code | O-MBCY-W3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 5 W | |
Qualification Status | Not Qualified | |
Reference Standard | MIL-19500/391 | |
Surface Mount | NO | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 100 MHz |
Alternate Parts for JANTXV2N3019S
This table gives cross-reference parts and alternative options found for JANTXV2N3019S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N3019S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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2N3019 | Motorola Semiconductor Products | Check for Price | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | JANTXV2N3019S vs 2N3019 |
JANTX2N3019 | Raytheon Semiconductor | Check for Price | Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39, | JANTXV2N3019S vs JANTX2N3019 |
2N3019 | Vishay Intertechnologies | Check for Price | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN | JANTXV2N3019S vs 2N3019 |
JAN2N3019 | National Semiconductor Corporation | Check for Price | Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 | JANTXV2N3019S vs JAN2N3019 |
2N3019 | Micro Electronics Ltd | Check for Price | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | JANTXV2N3019S vs 2N3019 |
JAN2N3019 | Raytheon Semiconductor | Check for Price | Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39, | JANTXV2N3019S vs JAN2N3019 |
2N3019 | International Devices Inc | Check for Price | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, NPN, Silicon, TO-39, TO-39, 3 PIN | JANTXV2N3019S vs 2N3019 |
JAN2N3019S | onsemi | Check for Price | MIL-PRF-19500/391: 80 V, 1 A NPN Small Signal Transistor, TO-39 3-Lead, 100-BLKBX, Military Qualified | JANTXV2N3019S vs JAN2N3019S |
JANTXV2N3019 | National Semiconductor Corporation | Check for Price | Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 | JANTXV2N3019S vs JANTXV2N3019 |
2N3019 | Solid State Devices Inc (SSDI) | Check for Price | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN | JANTXV2N3019S vs 2N3019 |
JANTXV2N3019S Frequently Asked Questions (FAQ)
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The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using thermal vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
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To ensure the device is properly biased, follow the recommended biasing circuit in the datasheet, and make sure the voltage and current ratings are not exceeded. Additionally, use a stable voltage source and decouple the device with capacitors to minimize noise and oscillations.
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The JANTXV2N3019S is a high-reliability device that meets the requirements of MIL-PRF-19500 and is qualified to JAN-TXV-2 standards. It is also manufactured using onsemi's high-reliability manufacturing process, which includes rigorous testing and inspection to ensure high quality and reliability.
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Yes, the JANTXV2N3019S is designed to be radiation-hardened and can be used in applications that require resistance to total ionizing dose (TID) and single event effects (SEE). However, it's essential to consult the datasheet and radiation report for specific details on radiation performance and limitations.
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To prevent damage and ensure long-term reliability, store the JANTXV2N3019S in a dry, cool place, away from direct sunlight and moisture. Handle the devices with anti-static precautions, and avoid bending or flexing the leads. Follow the recommended packaging and shipping procedures to prevent mechanical stress and damage.