Part Details for JANTXV1N6475US by Semtech Corporation
Results Overview of JANTXV1N6475US by Semtech Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
JANTXV1N6475US Information
JANTXV1N6475US by Semtech Corporation is a Transient Suppressor.
Transient Suppressors are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Price & Stock for JANTXV1N6475US
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
600-JANTXV1N6475US-ND
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DigiKey | TVS DIODE 40.3VWM 63.5VC Lead time: 31 Weeks Container: Bulk | Limited Supply - Call |
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Buy Now | |
DISTI #
JANTXV1N6475US
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Avnet Americas | T DAP UNI 1500W - Trays (Alt: JANTXV1N6475US) RoHS: Not Compliant Min Qty: 250 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Tray | 0 |
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RFQ |
Part Details for JANTXV1N6475US
JANTXV1N6475US CAD Models
JANTXV1N6475US Part Data Attributes
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JANTXV1N6475US
Semtech Corporation
Buy Now
Datasheet
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Compare Parts:
JANTXV1N6475US
Semtech Corporation
Trans Voltage Suppressor Diode, 1500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, GLASS PACKAGE-2
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SEMTECH CORP | |
Package Description | HERMETIC SEALED, GLASS PACKAGE-2 | |
Pin Count | 2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.50 | |
Factory Lead Time | 18 Weeks | |
Samacsys Manufacturer | SEMTECH | |
Breakdown Voltage-Min | 43.7 V | |
Breakdown Voltage-Nom | 43.7 V | |
Case Connection | ISOLATED | |
Clamping Voltage-Max | 63.5 V | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | |
JESD-30 Code | O-LELF-N2 | |
Non-rep Peak Rev Power Dis-Max | 1500 W | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | GLASS | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Polarity | UNIDIRECTIONAL | |
Power Dissipation-Max | 3 W | |
Qualification Status | Qualified | |
Reference Standard | MIL-19500/552C | |
Rep Pk Reverse Voltage-Max | 40.3 V | |
Surface Mount | YES | |
Technology | AVALANCHE | |
Terminal Form | NO LEAD | |
Terminal Position | END |
Alternate Parts for JANTXV1N6475US
This table gives cross-reference parts and alternative options found for JANTXV1N6475US. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV1N6475US, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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1N6475US | Microchip Technology Inc | $15.0975 | Trans Voltage Suppressor Diode, 1500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon | JANTXV1N6475US vs 1N6475US |
JAN1N6475US | Microsemi Corporation | Check for Price | Trans Voltage Suppressor Diode, 1500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon, GLASS PACKAGE-2 | JANTXV1N6475US vs JAN1N6475US |
JANTXV1N6475US | Microsemi Corporation | Check for Price | Trans Voltage Suppressor Diode, 1500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon, GLASS PACKAGE-2 | JANTXV1N6475US vs JANTXV1N6475US |
JANTXV1N6475US Frequently Asked Questions (FAQ)
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The recommended PCB layout for optimal performance of the JANTXV1N6475US involves keeping the input and output traces as short as possible, using a solid ground plane, and placing bypass capacitors close to the device. Additionally, it's recommended to use a 4-layer PCB with a dedicated power plane and a dedicated ground plane to minimize noise and EMI.
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To ensure the reliability of the JANTXV1N6475US in high-temperature applications, it's essential to follow proper derating guidelines, ensure good thermal management, and use a suitable thermal interface material. Additionally, it's recommended to perform thorough testing and validation to ensure the device meets the required specifications under extreme temperature conditions.
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Potential failure modes of the JANTXV1N6475US include overvoltage, overcurrent, and thermal overstress. To mitigate these failure modes, it's essential to implement proper overvoltage protection, current limiting, and thermal management. Additionally, it's recommended to follow proper handling and storage procedures to prevent damage during manufacturing and assembly.
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The JANTXV1N6475US is designed to meet the requirements of MIL-PRF-38535, which includes radiation hardness. However, it's essential to consult with Semtech Corporation and perform thorough testing and validation to ensure the device meets the specific radiation requirements of the application.
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To troubleshoot issues with the JANTXV1N6475US, it's recommended to follow a systematic approach, including reviewing the datasheet, checking the PCB layout and design, verifying the input and output signals, and performing thorough testing and validation. Additionally, it's recommended to consult with Semtech Corporation's technical support team for guidance and assistance.