Datasheets
JANTXV1N6475US by:

Trans Voltage Suppressor Diode, 1500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, GLASS PACKAGE-2

Part Details for JANTXV1N6475US by Semtech Corporation

Results Overview of JANTXV1N6475US by Semtech Corporation

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JANTXV1N6475US Information

JANTXV1N6475US by Semtech Corporation is a Transient Suppressor.
Transient Suppressors are under the broader part category of Diodes.

A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.

Price & Stock for JANTXV1N6475US

Part # Distributor Description Stock Price Buy
DISTI # 600-JANTXV1N6475US-ND
DigiKey TVS DIODE 40.3VWM 63.5VC Lead time: 31 Weeks Container: Bulk Limited Supply - Call
Buy Now
DISTI # JANTXV1N6475US
Avnet Americas T DAP UNI 1500W - Trays (Alt: JANTXV1N6475US) RoHS: Not Compliant Min Qty: 250 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Tray 0
RFQ

Part Details for JANTXV1N6475US

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JANTXV1N6475US Part Data Attributes

JANTXV1N6475US Semtech Corporation
Buy Now Datasheet
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JANTXV1N6475US Semtech Corporation Trans Voltage Suppressor Diode, 1500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, GLASS PACKAGE-2
Part Life Cycle Code Transferred
Ihs Manufacturer SEMTECH CORP
Package Description HERMETIC SEALED, GLASS PACKAGE-2
Pin Count 2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Factory Lead Time 18 Weeks
Samacsys Manufacturer SEMTECH
Breakdown Voltage-Min 43.7 V
Breakdown Voltage-Nom 43.7 V
Case Connection ISOLATED
Clamping Voltage-Max 63.5 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LELF-N2
Non-rep Peak Rev Power Dis-Max 1500 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Polarity UNIDIRECTIONAL
Power Dissipation-Max 3 W
Qualification Status Qualified
Reference Standard MIL-19500/552C
Rep Pk Reverse Voltage-Max 40.3 V
Surface Mount YES
Technology AVALANCHE
Terminal Form NO LEAD
Terminal Position END

Alternate Parts for JANTXV1N6475US

This table gives cross-reference parts and alternative options found for JANTXV1N6475US. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV1N6475US, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
1N6475US Microchip Technology Inc $15.0975 Trans Voltage Suppressor Diode, 1500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon JANTXV1N6475US vs 1N6475US
JAN1N6475US Microsemi Corporation Check for Price Trans Voltage Suppressor Diode, 1500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon, GLASS PACKAGE-2 JANTXV1N6475US vs JAN1N6475US
JANTXV1N6475US Microsemi Corporation Check for Price Trans Voltage Suppressor Diode, 1500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon, GLASS PACKAGE-2 JANTXV1N6475US vs JANTXV1N6475US
Part Number Manufacturer Composite Price Description Compare
JAN1N6475US Microchip Technology Inc $19.8289 Trans Voltage Suppressor Diode, 1500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon JANTXV1N6475US vs JAN1N6475US
JANTXV1N6475US Microchip Technology Inc $26.8149 Trans Voltage Suppressor Diode, 1500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon JANTXV1N6475US vs JANTXV1N6475US
JANTX1N6475US Semtech Corporation Check for Price Trans Voltage Suppressor Diode, 1500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, GLASS PACKAGE-2 JANTXV1N6475US vs JANTX1N6475US
JAN1N6475US Semtech Corporation Check for Price Trans Voltage Suppressor Diode, 1500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, GLASS PACKAGE-2 JANTXV1N6475US vs JAN1N6475US
1N6475US Semtech Corporation Check for Price Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, HERMETIC SEALED, GLASS PACKAGE-2 JANTXV1N6475US vs 1N6475US
1N6475US Micross Components Check for Price Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, JANTXV1N6475US vs 1N6475US
1N6475US Sensitron Semiconductors Check for Price Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, MELF-2 JANTXV1N6475US vs 1N6475US
JANTX1N6475US Micross Components Check for Price Trans Voltage Suppressor Diode, 1500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, GLASS PACKAGE-2 JANTXV1N6475US vs JANTX1N6475US
1N6475US Microsemi Corporation Check for Price Trans Voltage Suppressor Diode, 1500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon, HERMETICALLY SEALED, GLASS, D-5C, MELF-2 JANTXV1N6475US vs 1N6475US
JAN1N6475US Defense Logistics Agency Check for Price Trans Voltage Suppressor Diode, 1500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon, GLASS PACKAGE-2 JANTXV1N6475US vs JAN1N6475US

JANTXV1N6475US Related Parts

JANTXV1N6475US Frequently Asked Questions (FAQ)

  • The recommended PCB layout for optimal performance of the JANTXV1N6475US involves keeping the input and output traces as short as possible, using a solid ground plane, and placing bypass capacitors close to the device. Additionally, it's recommended to use a 4-layer PCB with a dedicated power plane and a dedicated ground plane to minimize noise and EMI.

  • To ensure the reliability of the JANTXV1N6475US in high-temperature applications, it's essential to follow proper derating guidelines, ensure good thermal management, and use a suitable thermal interface material. Additionally, it's recommended to perform thorough testing and validation to ensure the device meets the required specifications under extreme temperature conditions.

  • Potential failure modes of the JANTXV1N6475US include overvoltage, overcurrent, and thermal overstress. To mitigate these failure modes, it's essential to implement proper overvoltage protection, current limiting, and thermal management. Additionally, it's recommended to follow proper handling and storage procedures to prevent damage during manufacturing and assembly.

  • The JANTXV1N6475US is designed to meet the requirements of MIL-PRF-38535, which includes radiation hardness. However, it's essential to consult with Semtech Corporation and perform thorough testing and validation to ensure the device meets the specific radiation requirements of the application.

  • To troubleshoot issues with the JANTXV1N6475US, it's recommended to follow a systematic approach, including reviewing the datasheet, checking the PCB layout and design, verifying the input and output signals, and performing thorough testing and validation. Additionally, it's recommended to consult with Semtech Corporation's technical support team for guidance and assistance.

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