Datasheets
JANTXV1N5806US by:

Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2

Part Details for JANTXV1N5806US by Semtech Corporation

Results Overview of JANTXV1N5806US by Semtech Corporation

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JANTXV1N5806US Information

JANTXV1N5806US by Semtech Corporation is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.

A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.

Price & Stock for JANTXV1N5806US

Part # Distributor Description Stock Price Buy
DISTI # 600-JANTXV1N5806US-ND
DigiKey DIODE STANDARD 150V 1.1A Lead time: 26 Weeks Container: Bulk Limited Supply - Call
Buy Now
DISTI # JANTXV1N5806US
Avnet Americas - Trays (Alt: JANTXV1N5806US) RoHS: Not Compliant Min Qty: 250 Package Multiple: 1 Lead time: 100 Weeks, 0 Days Container: Tray 0
RFQ
Bristol Electronics   146
RFQ

Part Details for JANTXV1N5806US

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JANTXV1N5806US Part Data Attributes

JANTXV1N5806US Semtech Corporation
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JANTXV1N5806US Semtech Corporation Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
Part Life Cycle Code Transferred
Ihs Manufacturer SEMTECH CORP
Package Description HERMETIC SEALED PACKAGE-2
Pin Count 2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.10.00.80
Factory Lead Time 100 Weeks
Samacsys Manufacturer SEMTECH
Application SUPER FAST SOFT RECOVERY
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 0.875 V
JESD-30 Code O-LELF-R2
Non-rep Pk Forward Current-Max 35 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Output Current-Max 2.5 A
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Qualification Status Qualified
Reference Standard MIL-19500/477
Rep Pk Reverse Voltage-Max 150 V
Reverse Recovery Time-Max 0.02 µs
Surface Mount YES
Terminal Form WRAP AROUND
Terminal Position END

Alternate Parts for JANTXV1N5806US

This table gives cross-reference parts and alternative options found for JANTXV1N5806US. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV1N5806US, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
JANTX1N5806US Semtech Corporation $16.8883 Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 JANTXV1N5806US vs JANTX1N5806US
JAN1N5806US Microchip Technology Inc $6.6802 Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon JANTXV1N5806US vs JAN1N5806US
JANTX1N5806US Microchip Technology Inc Check for Price Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon JANTXV1N5806US vs JANTX1N5806US
JANS1N5806US VPT Components Check for Price Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, JANTXV1N5806US vs JANS1N5806US
JANS1N5806US MACOM Check for Price Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, JANTXV1N5806US vs JANS1N5806US
1N5806US Microsemi Corporation Check for Price Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, JANTXV1N5806US vs 1N5806US
1N5806US Semtech Corporation Check for Price Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 JANTXV1N5806US vs 1N5806US
JANTXV1N5806US Microsemi Corporation Check for Price Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon, JANTXV1N5806US vs JANTXV1N5806US
Part Number Manufacturer Composite Price Description Compare
JANS1N5806URS Microchip Technology Inc $118.1339 Rectifier Diode, 1 Phase, 1 Element, 1A, 150V V(RRM), Silicon JANTXV1N5806US vs JANS1N5806URS
JANTXV1N5806URS Microchip Technology Inc $27.8741 Rectifier Diode, 1 Phase, 1 Element, 1A, 150V V(RRM), Silicon JANTXV1N5806US vs JANTXV1N5806URS
JANS1N5806US Microchip Technology Inc Check for Price Rectifier Diode, 1 Phase, 1 Element, 1A, 150V V(RRM), Silicon JANTXV1N5806US vs JANS1N5806US
JANTX1N5806US Bkc Semiconductors Inc Check for Price Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, JANTXV1N5806US vs JANTX1N5806US
JAN1N5806US Bkc Semiconductors Inc Check for Price Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, JANTXV1N5806US vs JAN1N5806US
JANS1N5806US Semtech Corporation Check for Price Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 JANTXV1N5806US vs JANS1N5806US
JANS1N5806URS Microsemi Corporation Check for Price Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2 JANTXV1N5806US vs JANS1N5806URS
1N5806U02A STMicroelectronics Check for Price Aerospace 2.5 A fast recovery rectifier JANTXV1N5806US vs 1N5806U02A
JANTXV1N5806US Defense Logistics Agency Check for Price Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon, JANTXV1N5806US vs JANTXV1N5806US
JAN1N5806US Sensitron Semiconductors Check for Price Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2 JANTXV1N5806US vs JAN1N5806US

JANTXV1N5806US Related Parts

JANTXV1N5806US Frequently Asked Questions (FAQ)

  • A good PCB layout for the JANTXV1N5806US involves keeping the input and output traces as short as possible, using a solid ground plane, and minimizing the distance between the device and the bypass capacitors. It's also recommended to use a 4-layer PCB with a dedicated power plane and a dedicated ground plane.

  • To ensure reliability in high-temperature applications, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive material for the PCB, and ensuring good airflow around the device. Additionally, it's recommended to derate the device's power dissipation according to the temperature derating curve provided in the datasheet.

  • The JANTXV1N5806US has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. This includes using ESD-safe materials, grounding oneself before handling the device, and using an ESD wrist strap or mat.

  • The JANTXV1N5806US is designed to meet the requirements of the NASA JANTXV standard for radiation-hardened devices. However, it's essential to consult with Semtech Corporation's radiation-hardened products team to ensure that the device meets the specific radiation requirements of your application.

  • The JANTXV1N5806US should be stored in a dry, cool place, away from direct sunlight and moisture. It's recommended to store the devices in their original packaging or in a sealed bag with desiccant to maintain a dry environment. Handling should be done with ESD-safe materials and tools to prevent damage.

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