Part Details for JANTXV1N5416US by Microchip Technology Inc
Results Overview of JANTXV1N5416US by Microchip Technology Inc
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Electronic Manufacturing
Renewable Energy
Automotive
JANTXV1N5416US Information
JANTXV1N5416US by Microchip Technology Inc is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Price & Stock for JANTXV1N5416US
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
35AJ3897
|
Newark | 110V 3A Ufr, frr Sq Smt B-Body Sq. Melf Rohs Compliant: Yes |Microchip JANTXV1N5416US RoHS: Compliant Min Qty: 121 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$10.8000 / $11.2300 | Buy Now |
|
DISTI #
1086-2809-ND
|
DigiKey | DIODE STANDARD 100V 3A D5B Min Qty: 121 Lead time: 24 Weeks Container: Bulk | Temporarily Out of Stock |
|
$11.2300 | Buy Now |
|
DISTI #
JANTXV1N5416US
|
Avnet Americas | Diode Fast Recovery Rectifier 100V 3A 2-Pin MELF - Bulk (Alt: JANTXV1N5416US) RoHS: Not Compliant Min Qty: 121 Package Multiple: 1 Lead time: 24 Weeks, 0 Days Container: Bulk | 0 |
|
$10.6013 / $11.2925 | Buy Now |
|
DISTI #
494-JANTXV1N5416US
|
Mouser Electronics | Small Signal Switching Diodes 110V 3A UFR,FRR SQ SMT RoHS: Not Compliant | 0 |
|
$11.2300 | Order Now |
|
DISTI #
JANTXV1N5416US
|
Microchip Technology Inc | UFR,FRR _ B-Body Sq. Melf, Projected EOL: 2049-02-05 COO: Philippines ECCN: EAR99 Lead time: 24 Weeks, 0 Days |
934 Alternates Available |
|
$12.1000 | Buy Now |
|
|
Onlinecomponents.com | Diode - JANTXV Level - 100V - 3A - 1.5 V @ 9 A Forward (Vf) (Max) @ If - Fast Recovery =< 500ns, > 200mA (Io) - D-5B Package. RoHS: Compliant | 934 Factory Stock |
|
$10.7000 / $21.9200 | Buy Now |
|
|
NAC | Rectifier RoHS: Compliant Min Qty: 28 Package Multiple: 1 | 0 |
|
$10.5400 / $12.7100 | Buy Now |
|
|
Master Electronics | Diode - JANTXV Level - 100V - 3A - 1.5 V @ 9 A Forward (Vf) (Max) @ If - Fast Recovery =< 500ns, > 200mA (Io) - D-5B Package. RoHS: Compliant | 934 Factory Stock |
|
$10.7000 / $21.9200 | Buy Now |
Part Details for JANTXV1N5416US
JANTXV1N5416US CAD Models
JANTXV1N5416US Part Data Attributes
|
|
JANTXV1N5416US
Microchip Technology Inc
Buy Now
Datasheet
|
Compare Parts:
JANTXV1N5416US
Microchip Technology Inc
Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon
|
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Package Description | GLASS PACKAGE-2 | |
| Reach Compliance Code | compliant | |
| Factory Lead Time | 24 Weeks | |
| Application | FAST RECOVERY POWER | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | RECTIFIER DIODE | |
| JESD-30 Code | O-LELF-R2 | |
| Non-rep Pk Forward Current-Max | 80 A | |
| Number of Elements | 1 | |
| Number of Phases | 1 | |
| Number of Terminals | 2 | |
| Output Current-Max | 3 A | |
| Package Body Material | GLASS | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/411L | |
| Reverse Recovery Time-Max | 0.15 µs | |
| Surface Mount | YES | |
| Terminal Form | WRAP AROUND | |
| Terminal Position | END |
Alternate Parts for JANTXV1N5416US
This table gives cross-reference parts and alternative options found for JANTXV1N5416US. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV1N5416US, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 1N5416US | Microchip Technology Inc | $11.0476 | Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon | JANTXV1N5416US vs 1N5416US |
| JANS1N5416US | Microsemi Corporation | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, GLASS PACKAGE-2 | JANTXV1N5416US vs JANS1N5416US |
| JANTX1N5416US | Microsemi Corporation | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, GLASS PACKAGE-2 | JANTXV1N5416US vs JANTX1N5416US |
JANTXV1N5416US Frequently Asked Questions (FAQ)
-
Microchip recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended. Additionally, vias should be placed under the thermal pad to improve heat dissipation.
-
To ensure reliable operation, follow proper PCB design and assembly guidelines, use a clean and controlled manufacturing environment, and implement robust testing and inspection procedures. Additionally, consider using a radiation-hardened version of the device, such as the JANTXV1N5416US, which is designed for high-reliability applications.
-
The JANTXV1N5416US is designed to withstand total ionizing dose (TID) radiation up to 300 krad(Si) and single-event effects (SEEs) up to 80 MeV-cm²/mg. However, the device's radiation tolerance may be affected by factors such as dose rate, temperature, and bias conditions. Consult the datasheet and radiation reports for more information.
-
Yes, the JANTXV1N5416US can be used in non-radiation environments, such as commercial or industrial applications. However, the device's radiation-hardened design may result in a higher cost compared to non-radiation-hardened alternatives.
-
The JANTXV1N5416US is a radiation-hardened version of the device, designed for high-reliability applications. It has undergone additional testing and screening to ensure its performance in radiation environments. The commercial version of the device may not have the same level of radiation tolerance and may not be suitable for high-reliability applications.