Part Details for JANTX2N6847 by International Rectifier
Results Overview of JANTX2N6847 by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
JANTX2N6847 Information
JANTX2N6847 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANTX2N6847
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 1 | 10 |
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$57.6900 / $60.0000 | Buy Now |
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Quest Components | 2.5 A, 200 V, 1.725 OHM, P-CHANNEL, SI, POWER, MOSFET, TO-205AF | 18 |
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$52.8795 / $58.7550 | Buy Now |
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Quest Components | 2.5 A, 200 V, 1.725 OHM, P-CHANNEL, SI, POWER, MOSFET, TO-205AF | 8 |
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$62.5000 / $65.0000 | Buy Now |
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NexGen Digital | 478 |
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RFQ |
Part Details for JANTX2N6847
JANTX2N6847 CAD Models
JANTX2N6847 Part Data Attributes
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JANTX2N6847
International Rectifier
Buy Now
Datasheet
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Compare Parts:
JANTX2N6847
International Rectifier
Power Field-Effect Transistor, 2.5A I(D), 200V, 1.725ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | |
| Package Description | HERMETIC SEALED, TO-39, 3 PIN | |
| Reach Compliance Code | unknown | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 180 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 2.5 A | |
| Drain-source On Resistance-Max | 1.725 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 20 W | |
| Power Dissipation-Max (Abs) | 20 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL-19500/563 | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 90 ns | |
| Turn-on Time-Max (ton) | 120 ns |
Alternate Parts for JANTX2N6847
This table gives cross-reference parts and alternative options found for JANTX2N6847. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6847, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N6847PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | JANTX2N6847 vs 2N6847PBF |
| IRFF9220-JQR-BR1 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | JANTX2N6847 vs IRFF9220-JQR-BR1 |
| IRFF9220PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 2.5A I(D), 200V, 1.725ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | JANTX2N6847 vs IRFF9220PBF |
| 2N6847 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 2.5A, 200V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | JANTX2N6847 vs 2N6847 |
| IRFF9220 | International Rectifier | Check for Price | Power Field-Effect Transistor, 2.5A I(D), 200V, 1.725ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | JANTX2N6847 vs IRFF9220 |
| IRFF9220 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | JANTX2N6847 vs IRFF9220 |
JANTX2N6847 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the JANTX2N6847 is -55°C to 150°C, as per the MIL-PRF-19500 standard.
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Yes, the JANTX2N6847 is a radiation-hardened power MOSFET, designed to withstand the harsh conditions of space and military applications.
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The JANTX2N6847 has a total dose radiation tolerance of 100 krad (Si), as per the MIL-PRF-19500 standard.
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Yes, the JANTX2N6847 is designed for high-reliability applications, such as aerospace, defense, and industrial systems, where failure is not an option.
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Yes, the JANTX2N6847 is compatible with lead-free soldering, making it suitable for RoHS-compliant designs.